Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition

N-type 4H-SiC homo-epitaxial films were grown under high growth rate condition by high speed wafer rotation vertical CVD tool, and dependence on N2 flow rate for in-wafer distribution of thickness and carrier concentration was investigated. By adjusting only the N2 flow rate from 0.33 to 130 sccm, a...

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Veröffentlicht in:	Materials science forum 2019-07, Vol.963, p.97-100
Hauptverfasser:	Ishiguro, Akio, Kobayashi, Takehiko, Daigo, Yoshiaki, Ishii, Shigeaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Carrier density Dependence Drift Epitaxial growth Flow velocity Slopes Thickness
Online-Zugang:	Volltext
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