Sequential infiltration synthesis- and solvent annealing-induced morphological changes in positive-tone e-beam resist patterns evaluated by atomic force microscopy

Morphological changes in thin film patterns of a positive-tone electron beam resist induced by sequential infiltration synthesis and solvent annealing were revealed by atomic force microscopy for the fabrication of silica imprint molds with sub-15 nm trenches. In sequential infiltration synthesis, t...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-06, Vol.58 (SD), p.SDDJ04
Hauptverfasser:	Ozaki, Yuki, Ito, Shunya, Nakamura, Takahiro, Nakagawa, Masaru
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic force microscopy Baking Defect annealing Electron beam lithography Infiltration Microscopy Morphology Silicon dioxide Solvents Substrates Synthesis Thickness Thin films Toluene
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