SrBi2Nb2O9 Ferroelectric Powders and Thin Films Prepared by Sol-Gel
Pure SrBi2Nb2O9 powders and thin films were obtained using sol-gel synthesis from mixtures of niobium ethoxide, bismuth and strontium 2-ethylhexanoates. Powders crystallized for 2 hours at 700°C had grain sizes of about 100–150 nm. SrBi2Nb2O9 thin films were prepared by spin-coating a stable precurs...
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| Veröffentlicht in: | Journal of sol-gel science and technology 1998-01, Vol.13 (1-3), p.885-888 |
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| container_title | Journal of sol-gel science and technology |
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| creator | Yi, J H Thomas, P Manier, M Mercurio, J P Jauberteau, I Guinebretière, R |
| description | Pure SrBi2Nb2O9 powders and thin films were obtained using sol-gel synthesis from mixtures of niobium ethoxide, bismuth and strontium 2-ethylhexanoates. Powders crystallized for 2 hours at 700°C had grain sizes of about 100–150 nm. SrBi2Nb2O9 thin films were prepared by spin-coating a stable precursor solution onto Si/SiO2/TiO2/Pt substrates. Crystallization of pure SrBi2Nb2O9 phase occurred at about 500–550°C. Randomly oriented 0.3 μm-thick crack-free films were obtained after 10 successive depositions and heating at 700°C for 2 hours. P-E hysteresis loops have confirmed the ferroelectric behavior of the films: they show a remanent polarization of 2.5 μC/cm2 (5 V, 8 ms). No fatigue was observed up to 109 full switchings. |
| doi_str_mv | 10.1023/A:1008667105783 |
| format | Article |
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Powders crystallized for 2 hours at 700°C had grain sizes of about 100–150 nm. SrBi2Nb2O9 thin films were prepared by spin-coating a stable precursor solution onto Si/SiO2/TiO2/Pt substrates. Crystallization of pure SrBi2Nb2O9 phase occurred at about 500–550°C. Randomly oriented 0.3 μm-thick crack-free films were obtained after 10 successive depositions and heating at 700°C for 2 hours. P-E hysteresis loops have confirmed the ferroelectric behavior of the films: they show a remanent polarization of 2.5 μC/cm2 (5 V, 8 ms). No fatigue was observed up to 109 full switchings.</description><identifier>ISSN: 0928-0707</identifier><identifier>EISSN: 1573-4846</identifier><identifier>DOI: 10.1023/A:1008667105783</identifier><language>eng</language><publisher>New York: Springer Nature B.V</publisher><subject>Bismuth ; Crystallization ; Ferroelectric materials ; Ferroelectricity ; Grain size ; Hysteresis loops ; Niobium ; Silicon dioxide ; Silicon substrates ; Sol-gel processes ; Spin coating ; Thick films ; Thin films ; Titanium dioxide</subject><ispartof>Journal of sol-gel science and technology, 1998-01, Vol.13 (1-3), p.885-888</ispartof><rights>Journal of Sol-Gel Science and Technology is a copyright of Springer, (1998). 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Powders crystallized for 2 hours at 700°C had grain sizes of about 100–150 nm. SrBi2Nb2O9 thin films were prepared by spin-coating a stable precursor solution onto Si/SiO2/TiO2/Pt substrates. Crystallization of pure SrBi2Nb2O9 phase occurred at about 500–550°C. Randomly oriented 0.3 μm-thick crack-free films were obtained after 10 successive depositions and heating at 700°C for 2 hours. P-E hysteresis loops have confirmed the ferroelectric behavior of the films: they show a remanent polarization of 2.5 μC/cm2 (5 V, 8 ms). No fatigue was observed up to 109 full switchings.</description><subject>Bismuth</subject><subject>Crystallization</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Grain size</subject><subject>Hysteresis loops</subject><subject>Niobium</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>Sol-gel processes</subject><subject>Spin coating</subject><subject>Thick films</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><issn>0928-0707</issn><issn>1573-4846</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNotzc1LwzAYgPEgCs7p2WvAc_TNd-JtFjuF4Qab55Em77CjtjPpEP_7CXp6br-HkFsO9xyEfJg9cgBnjOWgrZNnZMK1lUw5Zc7JBLxwDCzYS3JVyh4AtOJ2Qqp1fmrFWyOWntaY84AdxjG3ka6G74S50NAnuvloe1q33Wehq4yHkDHR5oeuh47NsbsmF7vQFbz575S818-b6oUtlvPXarZgUQg7siBxxwU45bxFLqxHF5EbGYIEE3wyKoUm8pRcEzC5ADy6oAGTkq5RBuSU3P25hzx8HbGM2_1wzP3vciuE9lorKbw8Aa9hSuM</recordid><startdate>19980101</startdate><enddate>19980101</enddate><creator>Yi, J H</creator><creator>Thomas, P</creator><creator>Manier, M</creator><creator>Mercurio, J P</creator><creator>Jauberteau, I</creator><creator>Guinebretière, R</creator><general>Springer Nature B.V</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>19980101</creationdate><title>SrBi2Nb2O9 Ferroelectric Powders and Thin Films Prepared by Sol-Gel</title><author>Yi, J H ; Thomas, P ; Manier, M ; Mercurio, J P ; Jauberteau, I ; Guinebretière, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-a3ef12084897e1279e8ce163aa306a9d64dabc1dd8baed8a01c8a50ed438b4603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Bismuth</topic><topic>Crystallization</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Grain size</topic><topic>Hysteresis loops</topic><topic>Niobium</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>Sol-gel processes</topic><topic>Spin coating</topic><topic>Thick films</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yi, J H</creatorcontrib><creatorcontrib>Thomas, P</creatorcontrib><creatorcontrib>Manier, M</creatorcontrib><creatorcontrib>Mercurio, J P</creatorcontrib><creatorcontrib>Jauberteau, I</creatorcontrib><creatorcontrib>Guinebretière, R</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>Journal of sol-gel science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yi, J H</au><au>Thomas, P</au><au>Manier, M</au><au>Mercurio, J P</au><au>Jauberteau, I</au><au>Guinebretière, R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SrBi2Nb2O9 Ferroelectric Powders and Thin Films Prepared by Sol-Gel</atitle><jtitle>Journal of sol-gel science and technology</jtitle><date>1998-01-01</date><risdate>1998</risdate><volume>13</volume><issue>1-3</issue><spage>885</spage><epage>888</epage><pages>885-888</pages><issn>0928-0707</issn><eissn>1573-4846</eissn><abstract>Pure SrBi2Nb2O9 powders and thin films were obtained using sol-gel synthesis from mixtures of niobium ethoxide, bismuth and strontium 2-ethylhexanoates. Powders crystallized for 2 hours at 700°C had grain sizes of about 100–150 nm. SrBi2Nb2O9 thin films were prepared by spin-coating a stable precursor solution onto Si/SiO2/TiO2/Pt substrates. Crystallization of pure SrBi2Nb2O9 phase occurred at about 500–550°C. Randomly oriented 0.3 μm-thick crack-free films were obtained after 10 successive depositions and heating at 700°C for 2 hours. P-E hysteresis loops have confirmed the ferroelectric behavior of the films: they show a remanent polarization of 2.5 μC/cm2 (5 V, 8 ms). No fatigue was observed up to 109 full switchings.</abstract><cop>New York</cop><pub>Springer Nature B.V</pub><doi>10.1023/A:1008667105783</doi><tpages>4</tpages></addata></record> |
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| subjects | Bismuth Crystallization Ferroelectric materials Ferroelectricity Grain size Hysteresis loops Niobium Silicon dioxide Silicon substrates Sol-gel processes Spin coating Thick films Thin films Titanium dioxide |
| title | SrBi2Nb2O9 Ferroelectric Powders and Thin Films Prepared by Sol-Gel |
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