High quality nitride semiconductors grown on novel ScAlMgO4 substrates and their light emitting diodes

III-N semiconductors growth on high quality ScAlMgO4 (SCAMO) substrates was studied. The GaN epitaxial layer grown on the SCAMO substrate showed a low defect density of 5.6 × 107 cm−2 evaluated by cathode luminescence and had a distinct improvement in crystallinity compared to the GaN layer on a sap...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SC1041
Hauptverfasser:	Ueta, Akio, Ohno, Hiroshi, Yanagita, Naoto, Ryoki, Naoya, Miyano, Kentaro, Ishibashi, Akihiko, Nobuoka, Masaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Current injection Electroluminescence Epitaxial growth Gallium nitrides Light emitting diodes Luminescence Optical properties Organic light emitting diodes Photoluminescence Sapphire Semiconductors Substrates
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