The morphologies of GaN crystals grown on Ga- and N-face of HVPE seeds by the Na flux liquid phase epitaxial method

GaN crystal growth on Ga-face and N-face of HVPE-GaN seeds was investigated using Na flux liquid phase epitaxial (LPE) method, respectively. The phase structure and morphology of as-grown GaN crystals were characterized using X-ray diffraction (XRD) and the scanning electron microscope (SEM), respec...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SC1048
Hauptverfasser:	Hao, Hangfei, Yang, Tao, Yin, Yucong, Yang, Chen, Wu, Xi, Fan, Shiji, Li, Zhenrong
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Crystal structure Crystals Epitaxial growth Liquid phases Morphology Nitrogen Nucleation Optical microscopes Seeds Single crystals Solid phases X-ray diffraction
Online-Zugang:	Volltext
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