450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers
We investigated and improved optical waveguides along the vertical and horizontal directions in 450 nm GaInN laser diodes. As a result, we demonstrated a low threshold current density (1.15 kA cm−2) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82In0.18N/25 nm Al0.03Ga0.97N multi...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SCCC28 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | SC |
| container_start_page | SCCC28 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 58 |
| creator | Arakawa, Kei Miyoshi, Kohei Iida, Ryosuke Kato, Yuki Takeuchi, Tetsuya Miyoshi, Makoto Kamiyama, Satoshi Iwaya, Motoaki Akasaki, Isamu |
| description | We investigated and improved optical waveguides along the vertical and horizontal directions in 450 nm GaInN laser diodes. As a result, we demonstrated a low threshold current density (1.15 kA cm−2) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82In0.18N/25 nm Al0.03Ga0.97N multiple bottom cladding layer at room temperature under pulsed condition. This threshold current density is smaller than our typical value with a 1 m Al0.03Ga0.97N bottom cladding layer. AlInN/AlGaN multiple layers are useful as n-type cladding layers in visible laser diodes to achieve higher optical confinement factors while smooth surfaces were obtained. |
| doi_str_mv | 10.7567/1347-4065/ab12ca |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2259356644</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2259356644</sourcerecordid><originalsourceid>FETCH-LOGICAL-c299a-da98bc48eb5eab0b0d8d805d4aeea15ec9f6c169551250a232a57089611444363</originalsourceid><addsrcrecordid>eNp9kNFLwzAQh4MoOKfvPgZ8EqxL0iRtHkdxczCmoD6Ha5POlK6tSYfsv7ejoi8iHBx3fL87-BC6puQ-ETKZ0ZgnESdSzCCnrIATNPlZnaIJIYxGXDF2ji5CqIZRCk4n6JkLgpsdXsKq2WDvzNbi0HvXWVxDsB4b1xob8Kfr3_G8HqDZvF7CBu_2de-62uKiBmNcsx34g_XhEp2VUAd79d2n6G3x8Jo9Ruun5Sqbr6OCKQWRAZXmBU9tLizkJCcmNSkRhoO1QIUtVCkLKpUQlAkCLGYgEpIqSSnnPJbxFN2Mdzvffuxt6HXV7n0zvNSMCRULKQduishIFb4NwdtSd97twB80JfroTR8l6aMkPXobIndjxLXd781_8Ns_8KqCTotUv2RDZRlLdWfK-Av8aHsM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2259356644</pqid></control><display><type>article</type><title>450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Arakawa, Kei ; Miyoshi, Kohei ; Iida, Ryosuke ; Kato, Yuki ; Takeuchi, Tetsuya ; Miyoshi, Makoto ; Kamiyama, Satoshi ; Iwaya, Motoaki ; Akasaki, Isamu</creator><creatorcontrib>Arakawa, Kei ; Miyoshi, Kohei ; Iida, Ryosuke ; Kato, Yuki ; Takeuchi, Tetsuya ; Miyoshi, Makoto ; Kamiyama, Satoshi ; Iwaya, Motoaki ; Akasaki, Isamu</creatorcontrib><description>We investigated and improved optical waveguides along the vertical and horizontal directions in 450 nm GaInN laser diodes. As a result, we demonstrated a low threshold current density (1.15 kA cm−2) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82In0.18N/25 nm Al0.03Ga0.97N multiple bottom cladding layer at room temperature under pulsed condition. This threshold current density is smaller than our typical value with a 1 m Al0.03Ga0.97N bottom cladding layer. AlInN/AlGaN multiple layers are useful as n-type cladding layers in visible laser diodes to achieve higher optical confinement factors while smooth surfaces were obtained.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/1347-4065/ab12ca</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Current density ; Diodes ; Laser beam cladding ; Lasers ; Optical waveguides ; Semiconductor lasers ; Threshold currents</subject><ispartof>Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCC28</ispartof><rights>2019 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Jun 1, 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c299a-da98bc48eb5eab0b0d8d805d4aeea15ec9f6c169551250a232a57089611444363</citedby><cites>FETCH-LOGICAL-c299a-da98bc48eb5eab0b0d8d805d4aeea15ec9f6c169551250a232a57089611444363</cites><orcidid>0000-0002-5699-4193</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1347-4065/ab12ca/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Arakawa, Kei</creatorcontrib><creatorcontrib>Miyoshi, Kohei</creatorcontrib><creatorcontrib>Iida, Ryosuke</creatorcontrib><creatorcontrib>Kato, Yuki</creatorcontrib><creatorcontrib>Takeuchi, Tetsuya</creatorcontrib><creatorcontrib>Miyoshi, Makoto</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><creatorcontrib>Iwaya, Motoaki</creatorcontrib><creatorcontrib>Akasaki, Isamu</creatorcontrib><title>450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We investigated and improved optical waveguides along the vertical and horizontal directions in 450 nm GaInN laser diodes. As a result, we demonstrated a low threshold current density (1.15 kA cm−2) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82In0.18N/25 nm Al0.03Ga0.97N multiple bottom cladding layer at room temperature under pulsed condition. This threshold current density is smaller than our typical value with a 1 m Al0.03Ga0.97N bottom cladding layer. AlInN/AlGaN multiple layers are useful as n-type cladding layers in visible laser diodes to achieve higher optical confinement factors while smooth surfaces were obtained.</description><subject>Current density</subject><subject>Diodes</subject><subject>Laser beam cladding</subject><subject>Lasers</subject><subject>Optical waveguides</subject><subject>Semiconductor lasers</subject><subject>Threshold currents</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNp9kNFLwzAQh4MoOKfvPgZ8EqxL0iRtHkdxczCmoD6Ha5POlK6tSYfsv7ejoi8iHBx3fL87-BC6puQ-ETKZ0ZgnESdSzCCnrIATNPlZnaIJIYxGXDF2ji5CqIZRCk4n6JkLgpsdXsKq2WDvzNbi0HvXWVxDsB4b1xob8Kfr3_G8HqDZvF7CBu_2de-62uKiBmNcsx34g_XhEp2VUAd79d2n6G3x8Jo9Ruun5Sqbr6OCKQWRAZXmBU9tLizkJCcmNSkRhoO1QIUtVCkLKpUQlAkCLGYgEpIqSSnnPJbxFN2Mdzvffuxt6HXV7n0zvNSMCRULKQduishIFb4NwdtSd97twB80JfroTR8l6aMkPXobIndjxLXd781_8Ns_8KqCTotUv2RDZRlLdWfK-Av8aHsM</recordid><startdate>20190601</startdate><enddate>20190601</enddate><creator>Arakawa, Kei</creator><creator>Miyoshi, Kohei</creator><creator>Iida, Ryosuke</creator><creator>Kato, Yuki</creator><creator>Takeuchi, Tetsuya</creator><creator>Miyoshi, Makoto</creator><creator>Kamiyama, Satoshi</creator><creator>Iwaya, Motoaki</creator><creator>Akasaki, Isamu</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5699-4193</orcidid></search><sort><creationdate>20190601</creationdate><title>450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers</title><author>Arakawa, Kei ; Miyoshi, Kohei ; Iida, Ryosuke ; Kato, Yuki ; Takeuchi, Tetsuya ; Miyoshi, Makoto ; Kamiyama, Satoshi ; Iwaya, Motoaki ; Akasaki, Isamu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c299a-da98bc48eb5eab0b0d8d805d4aeea15ec9f6c169551250a232a57089611444363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Current density</topic><topic>Diodes</topic><topic>Laser beam cladding</topic><topic>Lasers</topic><topic>Optical waveguides</topic><topic>Semiconductor lasers</topic><topic>Threshold currents</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arakawa, Kei</creatorcontrib><creatorcontrib>Miyoshi, Kohei</creatorcontrib><creatorcontrib>Iida, Ryosuke</creatorcontrib><creatorcontrib>Kato, Yuki</creatorcontrib><creatorcontrib>Takeuchi, Tetsuya</creatorcontrib><creatorcontrib>Miyoshi, Makoto</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><creatorcontrib>Iwaya, Motoaki</creatorcontrib><creatorcontrib>Akasaki, Isamu</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Arakawa, Kei</au><au>Miyoshi, Kohei</au><au>Iida, Ryosuke</au><au>Kato, Yuki</au><au>Takeuchi, Tetsuya</au><au>Miyoshi, Makoto</au><au>Kamiyama, Satoshi</au><au>Iwaya, Motoaki</au><au>Akasaki, Isamu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2019-06-01</date><risdate>2019</risdate><volume>58</volume><issue>SC</issue><spage>SCCC28</spage><pages>SCCC28-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We investigated and improved optical waveguides along the vertical and horizontal directions in 450 nm GaInN laser diodes. As a result, we demonstrated a low threshold current density (1.15 kA cm−2) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82In0.18N/25 nm Al0.03Ga0.97N multiple bottom cladding layer at room temperature under pulsed condition. This threshold current density is smaller than our typical value with a 1 m Al0.03Ga0.97N bottom cladding layer. AlInN/AlGaN multiple layers are useful as n-type cladding layers in visible laser diodes to achieve higher optical confinement factors while smooth surfaces were obtained.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.7567/1347-4065/ab12ca</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-5699-4193</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCC28 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_journals_2259356644 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Current density Diodes Laser beam cladding Lasers Optical waveguides Semiconductor lasers Threshold currents |
| title | 450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T20%3A56%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=450%20nm%20GaInN%20ridge%20stripe%20laser%20diodes%20with%20AlInN/AlGaN%20multiple%20cladding%20layers&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Arakawa,%20Kei&rft.date=2019-06-01&rft.volume=58&rft.issue=SC&rft.spage=SCCC28&rft.pages=SCCC28-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/1347-4065/ab12ca&rft_dat=%3Cproquest_cross%3E2259356644%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2259356644&rft_id=info:pmid/&rfr_iscdi=true |