Investigation of relative content of zinc-blende and wurtzite phases in GaP/Ge(111) using Raman spectroscopy

GaP/Ge(111) heterostructure with high residual strain is investigated for identification of allotrope, zincblende (ZB) and wurtzite (WZ) phase distribution in the grown GaP layer. Spatially resolved Raman spectroscopy across the cross-sectional surface of GaP/Ge(111) heteostructure show continuous b...

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Hauptverfasser:	Aggarwal, R., Ingale, Alka A., Dixit, V. K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Allotropy Blue shift Cross-sections Heterostructures Phase distribution Raman spectroscopy Spectrum analysis Strain analysis Thin films Wurtzite Zincblende
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creator	Aggarwal, R. Ingale, Alka A. Dixit, V. K.
description	GaP/Ge(111) heterostructure with high residual strain is investigated for identification of allotrope, zincblende (ZB) and wurtzite (WZ) phase distribution in the grown GaP layer. Spatially resolved Raman spectroscopy across the cross-sectional surface of GaP/Ge(111) heteostructure show continuous blue shift in optical phonon frequencies from near interface to surface of GaP/Ge. Polarized Raman spectroscopy from cross-sectional surface, at near and away from interface positions, establishes that WZ phase is dominant at GaP-Ge interface. Further, higher strained regions of GaP/Ge heterostructure show larger content of wurtzite phase in GaP film. This work paves the way for probing the spatial dependent existence of allotropes and their relative content in micro/nanostructured thin films using Raman spectroscopy.
doi_str_mv	10.1063/1.5113161
format	Conference Proceeding
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K.</creator><contributor>Yusuf, S. M. ; Sharma, Veerendra K. ; Biswas, Arup</contributor><creatorcontrib>Aggarwal, R. ; Ingale, Alka A. ; Dixit, V. K. ; Yusuf, S. M. ; Sharma, Veerendra K. ; Biswas, Arup</creatorcontrib><description>GaP/Ge(111) heterostructure with high residual strain is investigated for identification of allotrope, zincblende (ZB) and wurtzite (WZ) phase distribution in the grown GaP layer. Spatially resolved Raman spectroscopy across the cross-sectional surface of GaP/Ge(111) heteostructure show continuous blue shift in optical phonon frequencies from near interface to surface of GaP/Ge. Polarized Raman spectroscopy from cross-sectional surface, at near and away from interface positions, establishes that WZ phase is dominant at GaP-Ge interface. Further, higher strained regions of GaP/Ge heterostructure show larger content of wurtzite phase in GaP film. 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K.</creatorcontrib><title>Investigation of relative content of zinc-blende and wurtzite phases in GaP/Ge(111) using Raman spectroscopy</title><title>AIP conference proceedings</title><description>GaP/Ge(111) heterostructure with high residual strain is investigated for identification of allotrope, zincblende (ZB) and wurtzite (WZ) phase distribution in the grown GaP layer. Spatially resolved Raman spectroscopy across the cross-sectional surface of GaP/Ge(111) heteostructure show continuous blue shift in optical phonon frequencies from near interface to surface of GaP/Ge. Polarized Raman spectroscopy from cross-sectional surface, at near and away from interface positions, establishes that WZ phase is dominant at GaP-Ge interface. Further, higher strained regions of GaP/Ge heterostructure show larger content of wurtzite phase in GaP film. This work paves the way for probing the spatial dependent existence of allotropes and their relative content in micro/nanostructured thin films using Raman spectroscopy.</description><subject>Allotropy</subject><subject>Blue shift</subject><subject>Cross-sections</subject><subject>Heterostructures</subject><subject>Phase distribution</subject><subject>Raman spectroscopy</subject><subject>Spectrum analysis</subject><subject>Strain analysis</subject><subject>Thin films</subject><subject>Wurtzite</subject><subject>Zincblende</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kF9LwzAUxYMoOKcPfoOALyp0y03atHmUoXMwUETBt5Dmz-zY0tqkk-3T2znBN5_u4fLjHM5B6BLICAhnYxhlAAw4HKEBZBkkOQd-jAaEiDShKXs_RWchLAmhIs-LAVrN_MaGWC1UrGqPa4dbu-r1xmJd-2h93P92lddJubLeWKy8wV9dG3dVtLj5UMEGXHk8Vc_jqb0GgBvchcov8ItaK49DY3Vs66DrZnuOTpxaBXvxe4fo7eH-dfKYzJ-ms8ndPGloxmLCtRbCUJcrK4pSla4EV2RaMGdNmguljKUZYcJyl2rGRVqkArhSNNeGWFOwIbo6-DZt_dn19eSy7lrfR0pKM84oFwXrqdsDFXQVf-rLpq3Wqt1KIHK_pgT5u-Z_8KZu_0DZGMe-AWSEdpQ</recordid><startdate>20190711</startdate><enddate>20190711</enddate><creator>Aggarwal, R.</creator><creator>Ingale, Alka A.</creator><creator>Dixit, V. 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K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p253t-6cc99d2f7ae98babfb1f85c93fed479aade25039e6f4c369484916aa27cd0ed83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Allotropy</topic><topic>Blue shift</topic><topic>Cross-sections</topic><topic>Heterostructures</topic><topic>Phase distribution</topic><topic>Raman spectroscopy</topic><topic>Spectrum analysis</topic><topic>Strain analysis</topic><topic>Thin films</topic><topic>Wurtzite</topic><topic>Zincblende</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aggarwal, R.</creatorcontrib><creatorcontrib>Ingale, Alka A.</creatorcontrib><creatorcontrib>Dixit, V. 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M.</au><au>Sharma, Veerendra K.</au><au>Biswas, Arup</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigation of relative content of zinc-blende and wurtzite phases in GaP/Ge(111) using Raman spectroscopy</atitle><btitle>AIP conference proceedings</btitle><date>2019-07-11</date><risdate>2019</risdate><volume>2115</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>GaP/Ge(111) heterostructure with high residual strain is investigated for identification of allotrope, zincblende (ZB) and wurtzite (WZ) phase distribution in the grown GaP layer. Spatially resolved Raman spectroscopy across the cross-sectional surface of GaP/Ge(111) heteostructure show continuous blue shift in optical phonon frequencies from near interface to surface of GaP/Ge. Polarized Raman spectroscopy from cross-sectional surface, at near and away from interface positions, establishes that WZ phase is dominant at GaP-Ge interface. Further, higher strained regions of GaP/Ge heterostructure show larger content of wurtzite phase in GaP film. This work paves the way for probing the spatial dependent existence of allotropes and their relative content in micro/nanostructured thin films using Raman spectroscopy.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5113161</doi><tpages>4</tpages></addata></record>
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subjects	Allotropy Blue shift Cross-sections Heterostructures Phase distribution Raman spectroscopy Spectrum analysis Strain analysis Thin films Wurtzite Zincblende
title	Investigation of relative content of zinc-blende and wurtzite phases in GaP/Ge(111) using Raman spectroscopy
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