Combining GeO2 passivation strategies aiming at dielectric layers with superior properties on germanium substrates

Oxygen transport and incorporation in hafnium doped GeO2 films (GeHfxOy) deposited on Ge were investigated. GeO desorption from GeO2/Ge was shown to be strongly suppressed by Hf incorporation. Nevertheless, O transport was not reduced to the same extent. Oxygen isotopic tracing in conjunction with n...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019, Vol.7 (27), p.8465-8470
Hauptverfasser:	Louise Patron Etcheverry, Henri Ivanov Boudinov, Gabriel Vieira Soares, Radtke, Cláudio
Format:	Artikel
Sprache:	eng
Schlagworte:	Dielectric properties Germanium Germanium oxides Nuclear reactions Oxygen Passivity Stacks Substrates Transport Vapor phases
Online-Zugang:	Volltext
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