Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation
We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage ( V TH ) shift of −6.2 V after 100 Gy X-ray irradiation. Based on spectroscopic ellipsometry (SE) and...
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| creator | Kim, Dong-Gyu Kim, Jong-Un Lee, Jun-Sun Park, Kwon-Shik Chang, Youn-Gyoung Kim, Myeong-Ho Choi, Duck-Kyun |
| description | We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (
V
TH
) shift of −6.2 V after 100 Gy X-ray irradiation. Based on spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS) analysis, we found that the Fermi energy (
E
F
) changes from 2.73 eV to 3.01 eV and that the sub-gap state of D1 and D2 changes near the conduction band minimum (CBM) of the a-IGZO film after X-ray irradiation. These results imply that the negative
V
TH
shift after X-ray irradiation is related to the increase in electron concentration of the a-IGZO TFT active layer. We confirmed that the sources for electron generation during X-ray irradiation are hydrogen incorporation from the adjacent layer or from ambient air to the active layer in the TFT, and the oxygen vacancy dependent persistent photocurrent (PPC) effect. Since both causes are reversible processes involving an activation energy, we demonstrate the
V
TH
shift recovery by thermal annealing.
We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization. |
| doi_str_mv | 10.1039/c9ra03053k |
| format | Article |
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V
TH
) shift of −6.2 V after 100 Gy X-ray irradiation. Based on spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS) analysis, we found that the Fermi energy (
E
F
) changes from 2.73 eV to 3.01 eV and that the sub-gap state of D1 and D2 changes near the conduction band minimum (CBM) of the a-IGZO film after X-ray irradiation. These results imply that the negative
V
TH
shift after X-ray irradiation is related to the increase in electron concentration of the a-IGZO TFT active layer. We confirmed that the sources for electron generation during X-ray irradiation are hydrogen incorporation from the adjacent layer or from ambient air to the active layer in the TFT, and the oxygen vacancy dependent persistent photocurrent (PPC) effect. Since both causes are reversible processes involving an activation energy, we demonstrate the
V
TH
shift recovery by thermal annealing.
We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c9ra03053k</identifier><identifier>PMID: 35515555</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Chemistry ; Cold storage ; Conduction bands ; Food irradiation ; Indium gallium zinc oxide ; Organic chemistry ; Photoelectric effect ; Photoelectric emission ; Photoelectrons ; Semiconductor devices ; Spectroellipsometry ; Spectrum analysis ; Thin film transistors ; Thin films ; Threshold voltage ; Transistors ; X ray irradiation ; X ray photoelectron spectroscopy</subject><ispartof>RSC advances, 2019-07, Vol.9 (36), p.2865-287</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><rights>Copyright Royal Society of Chemistry 2019</rights><rights>This journal is © The Royal Society of Chemistry 2019 The Royal Society of Chemistry</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-c5936e0f9b727ac79e357ed7c8137922ce81bc36442759efa33a915790eabf83</citedby><cites>FETCH-LOGICAL-c428t-c5936e0f9b727ac79e357ed7c8137922ce81bc36442759efa33a915790eabf83</cites><orcidid>0000-0002-1890-8370</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9065737/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9065737/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,315,728,781,785,865,886,27929,27930,53796,53798</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35515555$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Dong-Gyu</creatorcontrib><creatorcontrib>Kim, Jong-Un</creatorcontrib><creatorcontrib>Lee, Jun-Sun</creatorcontrib><creatorcontrib>Park, Kwon-Shik</creatorcontrib><creatorcontrib>Chang, Youn-Gyoung</creatorcontrib><creatorcontrib>Kim, Myeong-Ho</creatorcontrib><creatorcontrib>Choi, Duck-Kyun</creatorcontrib><title>Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation</title><title>RSC advances</title><addtitle>RSC Adv</addtitle><description>We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (
V
TH
) shift of −6.2 V after 100 Gy X-ray irradiation. Based on spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS) analysis, we found that the Fermi energy (
E
F
) changes from 2.73 eV to 3.01 eV and that the sub-gap state of D1 and D2 changes near the conduction band minimum (CBM) of the a-IGZO film after X-ray irradiation. These results imply that the negative
V
TH
shift after X-ray irradiation is related to the increase in electron concentration of the a-IGZO TFT active layer. We confirmed that the sources for electron generation during X-ray irradiation are hydrogen incorporation from the adjacent layer or from ambient air to the active layer in the TFT, and the oxygen vacancy dependent persistent photocurrent (PPC) effect. Since both causes are reversible processes involving an activation energy, we demonstrate the
V
TH
shift recovery by thermal annealing.
We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.</description><subject>Chemistry</subject><subject>Cold storage</subject><subject>Conduction bands</subject><subject>Food irradiation</subject><subject>Indium gallium zinc oxide</subject><subject>Organic chemistry</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photoelectrons</subject><subject>Semiconductor devices</subject><subject>Spectroellipsometry</subject><subject>Spectrum analysis</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>X ray irradiation</subject><subject>X ray photoelectron spectroscopy</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpdkUtLAzEUhYMoKurGvRJwI8JoHk0y2QhSfKEoiAtxE9LMnTY6nWgyU_DfG63WxyWQXO7H4eQehLYpOaSE6yOnoyWcCP68hNYZGciCEamXf73X0FZKTySXFJRJuorWuBBU5FpHjzcwtp2fAe4mEdIkNBWehaazY8Bp4usO-xbbfIrL88fbDOW29s0Ud9G2yacuRNy3FUT8UET7hn2MtvJZMbSbaKW2TYKtr3sD3Z-d3g8viuvb88vhyXXhBqzsCic0l0BqPVJMWac0cKGgUq6kXGnGHJR05LgcDJgSGmrLudVUKE3AjuqSb6DjuexLP5pC5aDN1hrzEv3UxjcTrDd_J62fmHGYGZ33objKAvtfAjG89pA6M_XJQdPYFkKfDJOSkpJRSTO69w99Cn1s8-8MY4IRTon6oA7mlIshpQj1wgwl5iM0M9R3J5-hXWV497f9BfodUQZ25kBMbjH9SZ2_A30Im7U</recordid><startdate>20190703</startdate><enddate>20190703</enddate><creator>Kim, Dong-Gyu</creator><creator>Kim, Jong-Un</creator><creator>Lee, Jun-Sun</creator><creator>Park, Kwon-Shik</creator><creator>Chang, Youn-Gyoung</creator><creator>Kim, Myeong-Ho</creator><creator>Choi, Duck-Kyun</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-1890-8370</orcidid></search><sort><creationdate>20190703</creationdate><title>Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation</title><author>Kim, Dong-Gyu ; Kim, Jong-Un ; Lee, Jun-Sun ; Park, Kwon-Shik ; Chang, Youn-Gyoung ; Kim, Myeong-Ho ; Choi, Duck-Kyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-c5936e0f9b727ac79e357ed7c8137922ce81bc36442759efa33a915790eabf83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Chemistry</topic><topic>Cold storage</topic><topic>Conduction bands</topic><topic>Food irradiation</topic><topic>Indium gallium zinc oxide</topic><topic>Organic chemistry</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photoelectrons</topic><topic>Semiconductor devices</topic><topic>Spectroellipsometry</topic><topic>Spectrum analysis</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>X ray irradiation</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Dong-Gyu</creatorcontrib><creatorcontrib>Kim, Jong-Un</creatorcontrib><creatorcontrib>Lee, Jun-Sun</creatorcontrib><creatorcontrib>Park, Kwon-Shik</creatorcontrib><creatorcontrib>Chang, Youn-Gyoung</creatorcontrib><creatorcontrib>Kim, Myeong-Ho</creatorcontrib><creatorcontrib>Choi, Duck-Kyun</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Dong-Gyu</au><au>Kim, Jong-Un</au><au>Lee, Jun-Sun</au><au>Park, Kwon-Shik</au><au>Chang, Youn-Gyoung</au><au>Kim, Myeong-Ho</au><au>Choi, Duck-Kyun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2019-07-03</date><risdate>2019</risdate><volume>9</volume><issue>36</issue><spage>2865</spage><epage>287</epage><pages>2865-287</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (
V
TH
) shift of −6.2 V after 100 Gy X-ray irradiation. Based on spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS) analysis, we found that the Fermi energy (
E
F
) changes from 2.73 eV to 3.01 eV and that the sub-gap state of D1 and D2 changes near the conduction band minimum (CBM) of the a-IGZO film after X-ray irradiation. These results imply that the negative
V
TH
shift after X-ray irradiation is related to the increase in electron concentration of the a-IGZO TFT active layer. We confirmed that the sources for electron generation during X-ray irradiation are hydrogen incorporation from the adjacent layer or from ambient air to the active layer in the TFT, and the oxygen vacancy dependent persistent photocurrent (PPC) effect. Since both causes are reversible processes involving an activation energy, we demonstrate the
V
TH
shift recovery by thermal annealing.
We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>35515555</pmid><doi>10.1039/c9ra03053k</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-1890-8370</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central Open Access; PubMed Central |
| subjects | Chemistry Cold storage Conduction bands Food irradiation Indium gallium zinc oxide Organic chemistry Photoelectric effect Photoelectric emission Photoelectrons Semiconductor devices Spectroellipsometry Spectrum analysis Thin film transistors Thin films Threshold voltage Transistors X ray irradiation X ray photoelectron spectroscopy |
| title | Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation |
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