Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers

Direct low-temperature bond technologies for III-nitride thin film devices are of great interest to both improve device performance and enable on-wafer integration with other semiconductor technologies. However, thin films released from their growth substrate are rather rough and difficult to prepar...

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Veröffentlicht in:	Applied physics letters 2019-06, Vol.114 (25)
Hauptverfasser:	Gerrer, Thomas, Graff, Andreas, Simon-Najasek, Michél, Czap, Heiko, Maier, Thomas, Benkhelifa, Fouad, Müller, Stefan, Nebel, Christoph, Waltereit, Patrick, Quay, Rüdiger, Cimalla, Volker
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Aluminum hydroxide Aluminum nitride Applied physics Chemical bonds Diamonds Electric contacts Gallium nitrides Hydroxides Interlayers Low temperature Mechanical properties Organic chemistry Recrystallization Semiconductor devices Substrates Surface layers Thin films Transistors
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