Injection signaling in relaxation oscillators
This paper investigates relation between injection signaling and the lock range of relaxation oscillators. We show that lock range is determined by the effective injection signals of Volterra circuits contributed by both external injection signals and the nonlinearity of oscillators. The larger the...
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Veröffentlicht in: | Analog integrated circuits and signal processing 2019-07, Vol.100 (1), p.133-148 |
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description | This paper investigates relation between injection signaling and the lock range of relaxation oscillators. We show that lock range is determined by the effective injection signals of Volterra circuits contributed by both external injection signals and the nonlinearity of oscillators. The larger the harmonic tones of injection signals and the higher the degree of the nonlinearity of oscillators, the larger the effective injection signals subsequently the larger the lock range. We further show in order to maximize the contribution of external injection signals, injection phase needs to be
π
/
2
, valid for oscillators with either single or multi-tone injections. Moreover, we show to maximize lock range, the duty cycle of injection signals needs to be 50%. Finally, we show the phase noise of relaxation oscillators has a similar profile as that of harmonic oscillators. The quality factor of relaxation oscillators is smaller as compared with that of harmonic oscillators. The higher the degree of the nonlinearity of the relaxation oscillator, the smaller the quality factor of the relaxation oscillator subsequently the higher the phase noise. The theoretical findings on the lock range of relaxation oscillators are validated using the simulation results of a dual-comparator relaxation oscillator designed in TSMC 180 nm 1.8 V CMOS technology. |
doi_str_mv | 10.1007/s10470-019-01409-x |
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π
/
2
, valid for oscillators with either single or multi-tone injections. Moreover, we show to maximize lock range, the duty cycle of injection signals needs to be 50%. Finally, we show the phase noise of relaxation oscillators has a similar profile as that of harmonic oscillators. The quality factor of relaxation oscillators is smaller as compared with that of harmonic oscillators. The higher the degree of the nonlinearity of the relaxation oscillator, the smaller the quality factor of the relaxation oscillator subsequently the higher the phase noise. The theoretical findings on the lock range of relaxation oscillators are validated using the simulation results of a dual-comparator relaxation oscillator designed in TSMC 180 nm 1.8 V CMOS technology.</description><identifier>ISSN: 0925-1030</identifier><identifier>EISSN: 1573-1979</identifier><identifier>DOI: 10.1007/s10470-019-01409-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Circuits and Systems ; CMOS ; Electrical Engineering ; Engineering ; Harmonic oscillators ; Injection ; Noise ; Nonlinearity ; Oscillators ; Q factors ; Relaxation oscillators ; Signal,Image and Speech Processing ; Signaling</subject><ispartof>Analog integrated circuits and signal processing, 2019-07, Vol.100 (1), p.133-148</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-d0d124ac8e13346e67c807fcf57ab6149baef8081a2cbe75a6848a54869285f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10470-019-01409-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10470-019-01409-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Yuan, Fei</creatorcontrib><creatorcontrib>Zhou, Yushi</creatorcontrib><title>Injection signaling in relaxation oscillators</title><title>Analog integrated circuits and signal processing</title><addtitle>Analog Integr Circ Sig Process</addtitle><description>This paper investigates relation between injection signaling and the lock range of relaxation oscillators. We show that lock range is determined by the effective injection signals of Volterra circuits contributed by both external injection signals and the nonlinearity of oscillators. The larger the harmonic tones of injection signals and the higher the degree of the nonlinearity of oscillators, the larger the effective injection signals subsequently the larger the lock range. We further show in order to maximize the contribution of external injection signals, injection phase needs to be
π
/
2
, valid for oscillators with either single or multi-tone injections. Moreover, we show to maximize lock range, the duty cycle of injection signals needs to be 50%. Finally, we show the phase noise of relaxation oscillators has a similar profile as that of harmonic oscillators. The quality factor of relaxation oscillators is smaller as compared with that of harmonic oscillators. The higher the degree of the nonlinearity of the relaxation oscillator, the smaller the quality factor of the relaxation oscillator subsequently the higher the phase noise. The theoretical findings on the lock range of relaxation oscillators are validated using the simulation results of a dual-comparator relaxation oscillator designed in TSMC 180 nm 1.8 V CMOS technology.</description><subject>Circuits and Systems</subject><subject>CMOS</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Harmonic oscillators</subject><subject>Injection</subject><subject>Noise</subject><subject>Nonlinearity</subject><subject>Oscillators</subject><subject>Q factors</subject><subject>Relaxation oscillators</subject><subject>Signal,Image and Speech Processing</subject><subject>Signaling</subject><issn>0925-1030</issn><issn>1573-1979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMoWFf_gKeC5-hMmubjKIu6Cwte9h7SbFpSarsmXaj_3roVvHkYBobnfRkeQu4RHhFAPiUELoEC6nk4aDpdkAxLWVDUUl-SDDQrKUIB1-QmpRYAmOSQEbrtW-_GMPR5Ck1vu9A3eejz6Ds72fN9SC50nR2HmG7JVW275O9-94rsX1_26w3dvb9t18876piEkR7ggIxbpzwWBRdeSKdA1q4upa0Ecl1ZXytQaJmrvCytUFzZkiuhmSrrYkUeltpjHD5PPo2mHU5xfi4ZxjhTAgWXM8UWysUhpehrc4zhw8Yvg2B-rJjFipmtmLMVM82hYgmlGe4bH_-q_0l9A_MfZMQ</recordid><startdate>20190715</startdate><enddate>20190715</enddate><creator>Yuan, Fei</creator><creator>Zhou, Yushi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TG</scope><scope>8FD</scope><scope>KL.</scope><scope>L7M</scope></search><sort><creationdate>20190715</creationdate><title>Injection signaling in relaxation oscillators</title><author>Yuan, Fei ; Zhou, Yushi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-d0d124ac8e13346e67c807fcf57ab6149baef8081a2cbe75a6848a54869285f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Circuits and Systems</topic><topic>CMOS</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Harmonic oscillators</topic><topic>Injection</topic><topic>Noise</topic><topic>Nonlinearity</topic><topic>Oscillators</topic><topic>Q factors</topic><topic>Relaxation oscillators</topic><topic>Signal,Image and Speech Processing</topic><topic>Signaling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yuan, Fei</creatorcontrib><creatorcontrib>Zhou, Yushi</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Meteorological & Geoastrophysical Abstracts</collection><collection>Technology Research Database</collection><collection>Meteorological & Geoastrophysical Abstracts - Academic</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Analog integrated circuits and signal processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yuan, Fei</au><au>Zhou, Yushi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Injection signaling in relaxation oscillators</atitle><jtitle>Analog integrated circuits and signal processing</jtitle><stitle>Analog Integr Circ Sig Process</stitle><date>2019-07-15</date><risdate>2019</risdate><volume>100</volume><issue>1</issue><spage>133</spage><epage>148</epage><pages>133-148</pages><issn>0925-1030</issn><eissn>1573-1979</eissn><abstract>This paper investigates relation between injection signaling and the lock range of relaxation oscillators. We show that lock range is determined by the effective injection signals of Volterra circuits contributed by both external injection signals and the nonlinearity of oscillators. The larger the harmonic tones of injection signals and the higher the degree of the nonlinearity of oscillators, the larger the effective injection signals subsequently the larger the lock range. We further show in order to maximize the contribution of external injection signals, injection phase needs to be
π
/
2
, valid for oscillators with either single or multi-tone injections. Moreover, we show to maximize lock range, the duty cycle of injection signals needs to be 50%. Finally, we show the phase noise of relaxation oscillators has a similar profile as that of harmonic oscillators. The quality factor of relaxation oscillators is smaller as compared with that of harmonic oscillators. The higher the degree of the nonlinearity of the relaxation oscillator, the smaller the quality factor of the relaxation oscillator subsequently the higher the phase noise. The theoretical findings on the lock range of relaxation oscillators are validated using the simulation results of a dual-comparator relaxation oscillator designed in TSMC 180 nm 1.8 V CMOS technology.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10470-019-01409-x</doi><tpages>16</tpages></addata></record> |
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subjects | Circuits and Systems CMOS Electrical Engineering Engineering Harmonic oscillators Injection Noise Nonlinearity Oscillators Q factors Relaxation oscillators Signal,Image and Speech Processing Signaling |
title | Injection signaling in relaxation oscillators |
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