Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity

2D materials offer tremendous opportunities for designing and investigating multifunctional high‐performance electronic and optoelectronic devices. In this contribution, a photogate vertical structure is devised by vertically stacking layered indium selenide (InSe) on top of layered black phosphorou...

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Veröffentlicht in:	Advanced optical materials 2019-06, Vol.7 (12), p.n/a
Hauptverfasser:	Cao, Rui, Wang, Hui‐De, Guo, Zhi‐Nan, Sang, David K., Zhang, Li‐Yuan, Xiao, Quan‐Lan, Zhang, Yu‐Peng, Fan, Dian‐Yuan, Li, Jian‐Qing, Zhang, Han
Format:	Artikel
Sprache:	eng
Schlagworte:	black phosphorus Electronic devices indium selenide Indium selenides Infrared radiation Light Materials science Optics Optoelectronic devices photoconductive detector Photometers Quantum efficiency Spectral sensitivity Two dimensional materials vertical structure
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