[Formula Omitted]-Band Complex Permittivity Measurements at High Temperature Using Free-Space Methods
Free-space measurement techniques can be contactless and are able to accommodate large, flat sheets of dielectric material, making them useful for characterization of high-temperature, millimeter-wave, window and radome candidate materials. As part of the present work, a high-temperature, W-band (75...
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| Veröffentlicht in: | IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2019-01, Vol.9 (6), p.1011 |
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| container_title | IEEE transactions on components, packaging, and manufacturing technology (2011) |
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| creator | Hilario, Martin S Hoff, Brad W Benmaan Jawdat Lanagan, Michael T Cohick, Zane W Dynys, Frederick W Mackey, Jonathan A Gaone, Joseph M |
| description | Free-space measurement techniques can be contactless and are able to accommodate large, flat sheets of dielectric material, making them useful for characterization of high-temperature, millimeter-wave, window and radome candidate materials. As part of the present work, a high-temperature, W-band (75–110 GHz), free-space measurement system was developed and used to characterize complex dielectric properties of bulk material samples at temperatures ranging from 25 °C to 600 °C. Two test cases, polyvinyl chloride (PVC) and CoorsTek 92% alumina, were measured at 25 °C and found to have [Formula Omitted] values of 2.731 ± 0.005 and 8.061 ± 0.027 at 95 GHz, respectively. The 25 °C PVC sample was measured to have a [Formula Omitted] value of 0.032 ± 0.007. At 25 °C, the [Formula Omitted] value of the 92% alumina sample was below the uncertainty threshold achievable with the present free-space measurement apparatus and could only be bounded to |
| doi_str_mv | 10.1109/TCPMT.2019.2912837 |
| format | Article |
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As part of the present work, a high-temperature, W-band (75–110 GHz), free-space measurement system was developed and used to characterize complex dielectric properties of bulk material samples at temperatures ranging from 25 °C to 600 °C. Two test cases, polyvinyl chloride (PVC) and CoorsTek 92% alumina, were measured at 25 °C and found to have [Formula Omitted] values of 2.731 ± 0.005 and 8.061 ± 0.027 at 95 GHz, respectively. The 25 °C PVC sample was measured to have a [Formula Omitted] value of 0.032 ± 0.007. At 25 °C, the [Formula Omitted] value of the 92% alumina sample was below the uncertainty threshold achievable with the present free-space measurement apparatus and could only be bounded to <0.009. As the alumina sample was heated to 600 °C, [Formula Omitted] and [Formula Omitted] values increased to 8.501 ± 0.028 and 0.035 ± 0.008, respectively. The high-temperature behavior of the authors’ 92% alumina ceramic was found to be similar to that previously documented for Sumitomo AKP-50 alumina over the 25 °C–600 °C temperature range. In addition to the 92% alumina sample, three commercially available ceramic substrates (zirconium oxide, boron nitride, and silicon nitride) were also characterized at temperatures ranging from 25 °C to 600 °C.</description><identifier>ISSN: 2156-3950</identifier><identifier>EISSN: 2156-3985</identifier><identifier>DOI: 10.1109/TCPMT.2019.2912837</identifier><language>eng</language><publisher>Piscataway: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Alumina ; Aluminum oxide ; Boron nitride ; Complex permittivity ; Dielectric properties ; High temperature ; Materials selection ; Measurement methods ; Measurement techniques ; Millimeter waves ; Polyvinyl chloride ; Radomes ; Silicon nitride ; Silicon substrates ; Zirconium oxides</subject><ispartof>IEEE transactions on components, packaging, and manufacturing technology (2011), 2019-01, Vol.9 (6), p.1011</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Hilario, Martin S</creatorcontrib><creatorcontrib>Hoff, Brad W</creatorcontrib><creatorcontrib>Benmaan Jawdat</creatorcontrib><creatorcontrib>Lanagan, Michael T</creatorcontrib><creatorcontrib>Cohick, Zane W</creatorcontrib><creatorcontrib>Dynys, Frederick W</creatorcontrib><creatorcontrib>Mackey, Jonathan A</creatorcontrib><creatorcontrib>Gaone, Joseph M</creatorcontrib><title>[Formula Omitted]-Band Complex Permittivity Measurements at High Temperature Using Free-Space Methods</title><title>IEEE transactions on components, packaging, and manufacturing technology (2011)</title><description>Free-space measurement techniques can be contactless and are able to accommodate large, flat sheets of dielectric material, making them useful for characterization of high-temperature, millimeter-wave, window and radome candidate materials. As part of the present work, a high-temperature, W-band (75–110 GHz), free-space measurement system was developed and used to characterize complex dielectric properties of bulk material samples at temperatures ranging from 25 °C to 600 °C. Two test cases, polyvinyl chloride (PVC) and CoorsTek 92% alumina, were measured at 25 °C and found to have [Formula Omitted] values of 2.731 ± 0.005 and 8.061 ± 0.027 at 95 GHz, respectively. The 25 °C PVC sample was measured to have a [Formula Omitted] value of 0.032 ± 0.007. At 25 °C, the [Formula Omitted] value of the 92% alumina sample was below the uncertainty threshold achievable with the present free-space measurement apparatus and could only be bounded to <0.009. As the alumina sample was heated to 600 °C, [Formula Omitted] and [Formula Omitted] values increased to 8.501 ± 0.028 and 0.035 ± 0.008, respectively. The high-temperature behavior of the authors’ 92% alumina ceramic was found to be similar to that previously documented for Sumitomo AKP-50 alumina over the 25 °C–600 °C temperature range. In addition to the 92% alumina sample, three commercially available ceramic substrates (zirconium oxide, boron nitride, and silicon nitride) were also characterized at temperatures ranging from 25 °C to 600 °C.</description><subject>Alumina</subject><subject>Aluminum oxide</subject><subject>Boron nitride</subject><subject>Complex permittivity</subject><subject>Dielectric properties</subject><subject>High temperature</subject><subject>Materials selection</subject><subject>Measurement methods</subject><subject>Measurement techniques</subject><subject>Millimeter waves</subject><subject>Polyvinyl chloride</subject><subject>Radomes</subject><subject>Silicon nitride</subject><subject>Silicon substrates</subject><subject>Zirconium oxides</subject><issn>2156-3950</issn><issn>2156-3985</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqNi01Lw0AYhBdpwVLzBzy94DlxP9hu9mow9FIsGE-llKV5bbdks3F3I_rvjSA9O5cZ5pkh5J7RgjGqH5tqu2kKTpkuuGa8FOqGLDiTq1zoUs6uWdJbksV4oZNkSRUVC4K72gc3dgZenE0J233-ZPoWKu-GDr9gi-G3t582fcMGTRwDOuxTBJNgbU9naNANGEyaALxF25-gDoj562COOD3S2bfxjszfTRcx-_Mleaifm2qdD8F_jBjT4eLH0E_owLlQKyW1UOJ_qx_KC058</recordid><startdate>20190101</startdate><enddate>20190101</enddate><creator>Hilario, Martin S</creator><creator>Hoff, Brad W</creator><creator>Benmaan Jawdat</creator><creator>Lanagan, Michael T</creator><creator>Cohick, Zane W</creator><creator>Dynys, Frederick W</creator><creator>Mackey, Jonathan A</creator><creator>Gaone, Joseph M</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20190101</creationdate><title>[Formula Omitted]-Band Complex Permittivity Measurements at High Temperature Using Free-Space Methods</title><author>Hilario, Martin S ; Hoff, Brad W ; Benmaan Jawdat ; Lanagan, Michael T ; Cohick, Zane W ; Dynys, Frederick W ; Mackey, Jonathan A ; Gaone, Joseph M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_22376759373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Alumina</topic><topic>Aluminum oxide</topic><topic>Boron nitride</topic><topic>Complex permittivity</topic><topic>Dielectric properties</topic><topic>High temperature</topic><topic>Materials selection</topic><topic>Measurement methods</topic><topic>Measurement techniques</topic><topic>Millimeter waves</topic><topic>Polyvinyl chloride</topic><topic>Radomes</topic><topic>Silicon nitride</topic><topic>Silicon substrates</topic><topic>Zirconium oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hilario, Martin S</creatorcontrib><creatorcontrib>Hoff, Brad W</creatorcontrib><creatorcontrib>Benmaan Jawdat</creatorcontrib><creatorcontrib>Lanagan, Michael T</creatorcontrib><creatorcontrib>Cohick, Zane W</creatorcontrib><creatorcontrib>Dynys, Frederick W</creatorcontrib><creatorcontrib>Mackey, Jonathan A</creatorcontrib><creatorcontrib>Gaone, Joseph M</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on components, packaging, and manufacturing technology (2011)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hilario, Martin S</au><au>Hoff, Brad W</au><au>Benmaan Jawdat</au><au>Lanagan, Michael T</au><au>Cohick, Zane W</au><au>Dynys, Frederick W</au><au>Mackey, Jonathan A</au><au>Gaone, Joseph M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>[Formula Omitted]-Band Complex Permittivity Measurements at High Temperature Using Free-Space Methods</atitle><jtitle>IEEE transactions on components, packaging, and manufacturing technology (2011)</jtitle><date>2019-01-01</date><risdate>2019</risdate><volume>9</volume><issue>6</issue><spage>1011</spage><pages>1011-</pages><issn>2156-3950</issn><eissn>2156-3985</eissn><abstract>Free-space measurement techniques can be contactless and are able to accommodate large, flat sheets of dielectric material, making them useful for characterization of high-temperature, millimeter-wave, window and radome candidate materials. As part of the present work, a high-temperature, W-band (75–110 GHz), free-space measurement system was developed and used to characterize complex dielectric properties of bulk material samples at temperatures ranging from 25 °C to 600 °C. Two test cases, polyvinyl chloride (PVC) and CoorsTek 92% alumina, were measured at 25 °C and found to have [Formula Omitted] values of 2.731 ± 0.005 and 8.061 ± 0.027 at 95 GHz, respectively. The 25 °C PVC sample was measured to have a [Formula Omitted] value of 0.032 ± 0.007. At 25 °C, the [Formula Omitted] value of the 92% alumina sample was below the uncertainty threshold achievable with the present free-space measurement apparatus and could only be bounded to <0.009. As the alumina sample was heated to 600 °C, [Formula Omitted] and [Formula Omitted] values increased to 8.501 ± 0.028 and 0.035 ± 0.008, respectively. The high-temperature behavior of the authors’ 92% alumina ceramic was found to be similar to that previously documented for Sumitomo AKP-50 alumina over the 25 °C–600 °C temperature range. In addition to the 92% alumina sample, three commercially available ceramic substrates (zirconium oxide, boron nitride, and silicon nitride) were also characterized at temperatures ranging from 25 °C to 600 °C.</abstract><cop>Piscataway</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/TCPMT.2019.2912837</doi></addata></record> |
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| subjects | Alumina Aluminum oxide Boron nitride Complex permittivity Dielectric properties High temperature Materials selection Measurement methods Measurement techniques Millimeter waves Polyvinyl chloride Radomes Silicon nitride Silicon substrates Zirconium oxides |
| title | [Formula Omitted]-Band Complex Permittivity Measurements at High Temperature Using Free-Space Methods |
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