Growth of Cu2InO4 thin films on Si substrate by thermal evaporation technique and enhancement of thermoelectric properties by post-growth annealing

Thin films of Cu2InO4 were grown by thermal evaporation on Si substrate using tube furnace. Cu and In metals were evaporated in the tube furnace having pressure 0.2 × 10−2 Torr and the oxygen gas flow rate was set 60 standard cubic centimeters (sccm). The post-growth annealing in oxygen environment...

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