Study of crack generation process in scratching of gallium nitride

Single-crystal GaN has many excellent features, including high thermal conductivity, heat dissipation, possibility of operation at high temperature, high speed of electron saturation, and high dielectric breakdown voltage. Therefore, it is expected to be utilized for power devices with low power los...

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Veröffentlicht in:	Journal of the Japan Society for Abrasive Technology 2017/07/01, Vol.61(7), pp.392-397
Hauptverfasser:	ＴＡＫＡＳＵ, Ｙｏｓｈｉｆｕｍｉ, SHIMADA, Keita, MIZUTANＩ, Masayoshi, KURIYAGAWA, Tsunemoto
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	brittle fracture Diamonds Dielectric breakdown Electronic devices Gallium nitrides GaN Grinding High temperature Power loss Scratching scratching experiment Single crystals single grain grinding Substrates Thermal conductivity
Online-Zugang:	Volltext
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