Study of crack generation process in scratching of gallium nitride
Single-crystal GaN has many excellent features, including high thermal conductivity, heat dissipation, possibility of operation at high temperature, high speed of electron saturation, and high dielectric breakdown voltage. Therefore, it is expected to be utilized for power devices with low power los...
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| Veröffentlicht in: | Journal of the Japan Society for Abrasive Technology 2017/07/01, Vol.61(7), pp.392-397 |
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| container_end_page | 397 |
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| container_issue | 7 |
| container_start_page | 392 |
| container_title | Journal of the Japan Society for Abrasive Technology |
| container_volume | 61 |
| creator | ＴＡＫＡＳＵ, Ｙｏｓｈｉｆｕｍｉ SHIMADA, Keita MIZUTANＩ, Masayoshi KURIYAGAWA, Tsunemoto |
| description | Single-crystal GaN has many excellent features, including high thermal conductivity, heat dissipation, possibility of operation at high temperature, high speed of electron saturation, and high dielectric breakdown voltage. Therefore, it is expected to be utilized for power devices with low power loss. GaN has a hardness of 1800 – 2000 Hv and is brittle, so it is very difficult to process. This research was performed to clarify the crack generation mechanism in the GaN semiconductor grinding process. To investigate the process of crack generation during single grinding, scratching experiments were conducted on the Ga polar plane of a GaN substrate using a single-crystal diamond indenter. The scratching results indicated that it is necessary to set the depth of cut of the tool to ≤ 180 nm to grind in the ductile state. |
| doi_str_mv | 10.11420/jsat.61.392 |
| format | Article |
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Therefore, it is expected to be utilized for power devices with low power loss. GaN has a hardness of 1800 – 2000 Hv and is brittle, so it is very difficult to process. This research was performed to clarify the crack generation mechanism in the GaN semiconductor grinding process. To investigate the process of crack generation during single grinding, scratching experiments were conducted on the Ga polar plane of a GaN substrate using a single-crystal diamond indenter. The scratching results indicated that it is necessary to set the depth of cut of the tool to ≤ 180 nm to grind in the ductile state.</description><identifier>ISSN: 0914-2703</identifier><identifier>EISSN: 1880-7534</identifier><identifier>DOI: 10.11420/jsat.61.392</identifier><language>eng ; jpn</language><publisher>Tokyo: The Japan Society for Abrasive Technology</publisher><subject>brittle fracture ; Diamonds ; Dielectric breakdown ; Electronic devices ; Gallium nitrides ; GaN ; Grinding ; High temperature ; Power loss ; Scratching ; scratching experiment ; Single crystals ; single grain grinding ; Substrates ; Thermal conductivity</subject><ispartof>Journal of the Japan Society for Abrasive Technology, 2017/07/01, Vol.61(7), pp.392-397</ispartof><rights>2017 by The Japan Society for Abrasive Technology</rights><rights>Copyright Japan Science and Technology Agency 2017</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1883,27924,27925</link.rule.ids></links><search><creatorcontrib>ＴＡＫＡＳＵ, Ｙｏｓｈｉｆｕｍｉ</creatorcontrib><creatorcontrib>SHIMADA, Keita</creatorcontrib><creatorcontrib>MIZUTANＩ, Masayoshi</creatorcontrib><creatorcontrib>KURIYAGAWA, Tsunemoto</creatorcontrib><title>Study of crack generation process in scratching of gallium nitride</title><title>Journal of the Japan Society for Abrasive Technology</title><addtitle>JSAT</addtitle><description>Single-crystal GaN has many excellent features, including high thermal conductivity, heat dissipation, possibility of operation at high temperature, high speed of electron saturation, and high dielectric breakdown voltage. 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The scratching results indicated that it is necessary to set the depth of cut of the tool to ≤ 180 nm to grind in the ductile state.</description><subject>brittle fracture</subject><subject>Diamonds</subject><subject>Dielectric breakdown</subject><subject>Electronic devices</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Grinding</subject><subject>High temperature</subject><subject>Power loss</subject><subject>Scratching</subject><subject>scratching experiment</subject><subject>Single crystals</subject><subject>single grain grinding</subject><subject>Substrates</subject><subject>Thermal conductivity</subject><issn>0914-2703</issn><issn>1880-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9ULFOwzAUtBBIlMLGB1hiTvHzc-J4QYKKAlIlBrpbruOkDmlSbGfo35OqiOXecPfuTkfIPbAFgODssY0mLQpYoOIXZAZlyTKZo7gkM6ZAZFwyvCY3MbaMFQoYzMjLVxqrIx1qaoOx37RxvQsm-aGnhzBYFyP1PY0TmezO981J2Ziu8-Oe9j4FX7lbclWbLrq7vzsnm9XrZvmerT_fPpbP66wtMc8qqIScIg3UdamskMoi4DYvmQOJMPWvthViiZCjRQkclSosr3PBt1JYhnPycLadev2MLibdDmPop0TNOeZ5IdX0OidPZ1Ubk2mcPgS_N-GoTUjedk6fFtIFaHmCaaZ_wu5M0K7HX4E_YPQ</recordid><startdate>20170701</startdate><enddate>20170701</enddate><creator>ＴＡＫＡＳＵ, Ｙｏｓｈｉｆｕｍｉ</creator><creator>SHIMADA, Keita</creator><creator>MIZUTANＩ, Masayoshi</creator><creator>KURIYAGAWA, Tsunemoto</creator><general>The Japan Society for Abrasive Technology</general><general>Japan Science and Technology Agency</general><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20170701</creationdate><title>Study of crack generation process in scratching of gallium nitride</title><author>ＴＡＫＡＳＵ, Ｙｏｓｈｉｆｕｍｉ ; SHIMADA, Keita ; MIZUTANＩ, Masayoshi ; KURIYAGAWA, Tsunemoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j835-d1d47101a1ff89c479c313b580e1731114dbd3383153c37123996c2f542b74c03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>brittle fracture</topic><topic>Diamonds</topic><topic>Dielectric breakdown</topic><topic>Electronic devices</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Grinding</topic><topic>High temperature</topic><topic>Power loss</topic><topic>Scratching</topic><topic>scratching experiment</topic><topic>Single crystals</topic><topic>single grain grinding</topic><topic>Substrates</topic><topic>Thermal conductivity</topic><toplevel>online_resources</toplevel><creatorcontrib>ＴＡＫＡＳＵ, Ｙｏｓｈｉｆｕｍｉ</creatorcontrib><creatorcontrib>SHIMADA, Keita</creatorcontrib><creatorcontrib>MIZUTANＩ, Masayoshi</creatorcontrib><creatorcontrib>KURIYAGAWA, Tsunemoto</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Japan Society for Abrasive Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ＴＡＫＡＳＵ, Ｙｏｓｈｉｆｕｍｉ</au><au>SHIMADA, Keita</au><au>MIZUTANＩ, Masayoshi</au><au>KURIYAGAWA, Tsunemoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of crack generation process in scratching of gallium nitride</atitle><jtitle>Journal of the Japan Society for Abrasive Technology</jtitle><addtitle>JSAT</addtitle><date>2017-07-01</date><risdate>2017</risdate><volume>61</volume><issue>7</issue><spage>392</spage><epage>397</epage><pages>392-397</pages><issn>0914-2703</issn><eissn>1880-7534</eissn><abstract>Single-crystal GaN has many excellent features, including high thermal conductivity, heat dissipation, possibility of operation at high temperature, high speed of electron saturation, and high dielectric breakdown voltage. 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| language | eng ; jpn |
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| subjects | brittle fracture Diamonds Dielectric breakdown Electronic devices Gallium nitrides GaN Grinding High temperature Power loss Scratching scratching experiment Single crystals single grain grinding Substrates Thermal conductivity |
| title | Study of crack generation process in scratching of gallium nitride |
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