Higher-Order Lithography: Double-Deprotected Chemically Amplified Photoresists (DD-CAMP)
The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rat...
Gespeichert in:
| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2017/06/26, Vol.30(3), pp.351-359 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 359 |
|---|---|
| container_issue | 3 |
| container_start_page | 351 |
| container_title | Journal of Photopolymer Science and Technology |
| container_volume | 30 |
| creator | Soucie, Deanna Earley, William Hosoi, Kenji Takahashi, Arata Aoki, Takashi Cardineau, Brian Miyauchi, Koichi Brainard, Robert |
| description | The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction should be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists. |
| doi_str_mv | 10.2494/photopolymer.30.351 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2232603654</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2232603654</sourcerecordid><originalsourceid>FETCH-LOGICAL-c522t-f7689e5a1281447f119e3faa8f9dd42da9c39cef063094c37248f9aa8e956b273</originalsourceid><addsrcrecordid>eNplkEFLw0AQhRdRsFZ_gZeAFz2k7u5skq630lgrVNqDgrdlu5k0KUkTd7eH_HtTWorgaWDe--YNj5B7RkdcSPHcFo1v2qbqarQjoCOI2AUZMBAyjAHiSzKgkolQciGuyY1zW0oBokgOyPe83BRow6XN0AaL0hfNxuq26F6CtNmvKwxTbG3j0XjMgmmBdWl0VXXBpG6rMi_75eoQbtGVzrvgMU3D6eRj9XRLrnJdObw7zSH5mr1-TufhYvn2Pp0sQhNx7sM8iccSI834mAmR5IxJhFzrcS6zTPBMSwPSYE5joFIYSLjopV5HGcVrnsCQPBzv9l_-7NF5tW32dtdHKs6BxxTiSPQuOLqMbZyzmKvWlrW2nWJUHSpUfytUQFVfYU_NjtTWeb3BM6OtL02F_5kTeDaYQluFO_gFLrWChQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2232603654</pqid></control><display><type>article</type><title>Higher-Order Lithography: Double-Deprotected Chemically Amplified Photoresists (DD-CAMP)</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese</source><source>Free Full-Text Journals in Chemistry</source><creator>Soucie, Deanna ; Earley, William ; Hosoi, Kenji ; Takahashi, Arata ; Aoki, Takashi ; Cardineau, Brian ; Miyauchi, Koichi ; Brainard, Robert</creator><creatorcontrib>Soucie, Deanna ; Earley, William ; Hosoi, Kenji ; Takahashi, Arata ; Aoki, Takashi ; Cardineau, Brian ; Miyauchi, Koichi ; Brainard, Robert</creatorcontrib><description>The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction should be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.</description><identifier>ISSN: 0914-9244</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.30.351</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>193 nm ; DD-CAMP ; EUV ; Higher order ; Kinetics ; Organic chemistry ; Photoresist ; Photoresists ; Reaction kinetics ; Reaction mechanisms ; Resists</subject><ispartof>Journal of Photopolymer Science and Technology, 2017/06/26, Vol.30(3), pp.351-359</ispartof><rights>2017 The Society of Photopolymer Science and Technology (SPST)</rights><rights>Copyright Japan Science and Technology Agency 2017</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c522t-f7689e5a1281447f119e3faa8f9dd42da9c39cef063094c37248f9aa8e956b273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1883,27924,27925</link.rule.ids></links><search><creatorcontrib>Soucie, Deanna</creatorcontrib><creatorcontrib>Earley, William</creatorcontrib><creatorcontrib>Hosoi, Kenji</creatorcontrib><creatorcontrib>Takahashi, Arata</creatorcontrib><creatorcontrib>Aoki, Takashi</creatorcontrib><creatorcontrib>Cardineau, Brian</creatorcontrib><creatorcontrib>Miyauchi, Koichi</creatorcontrib><creatorcontrib>Brainard, Robert</creatorcontrib><title>Higher-Order Lithography: Double-Deprotected Chemically Amplified Photoresists (DD-CAMP)</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction should be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.</description><subject>193 nm</subject><subject>DD-CAMP</subject><subject>EUV</subject><subject>Higher order</subject><subject>Kinetics</subject><subject>Organic chemistry</subject><subject>Photoresist</subject><subject>Photoresists</subject><subject>Reaction kinetics</subject><subject>Reaction mechanisms</subject><subject>Resists</subject><issn>0914-9244</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNplkEFLw0AQhRdRsFZ_gZeAFz2k7u5skq630lgrVNqDgrdlu5k0KUkTd7eH_HtTWorgaWDe--YNj5B7RkdcSPHcFo1v2qbqarQjoCOI2AUZMBAyjAHiSzKgkolQciGuyY1zW0oBokgOyPe83BRow6XN0AaL0hfNxuq26F6CtNmvKwxTbG3j0XjMgmmBdWl0VXXBpG6rMi_75eoQbtGVzrvgMU3D6eRj9XRLrnJdObw7zSH5mr1-TufhYvn2Pp0sQhNx7sM8iccSI834mAmR5IxJhFzrcS6zTPBMSwPSYE5joFIYSLjopV5HGcVrnsCQPBzv9l_-7NF5tW32dtdHKs6BxxTiSPQuOLqMbZyzmKvWlrW2nWJUHSpUfytUQFVfYU_NjtTWeb3BM6OtL02F_5kTeDaYQluFO_gFLrWChQ</recordid><startdate>20170101</startdate><enddate>20170101</enddate><creator>Soucie, Deanna</creator><creator>Earley, William</creator><creator>Hosoi, Kenji</creator><creator>Takahashi, Arata</creator><creator>Aoki, Takashi</creator><creator>Cardineau, Brian</creator><creator>Miyauchi, Koichi</creator><creator>Brainard, Robert</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20170101</creationdate><title>Higher-Order Lithography: Double-Deprotected Chemically Amplified Photoresists (DD-CAMP)</title><author>Soucie, Deanna ; Earley, William ; Hosoi, Kenji ; Takahashi, Arata ; Aoki, Takashi ; Cardineau, Brian ; Miyauchi, Koichi ; Brainard, Robert</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c522t-f7689e5a1281447f119e3faa8f9dd42da9c39cef063094c37248f9aa8e956b273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>193 nm</topic><topic>DD-CAMP</topic><topic>EUV</topic><topic>Higher order</topic><topic>Kinetics</topic><topic>Organic chemistry</topic><topic>Photoresist</topic><topic>Photoresists</topic><topic>Reaction kinetics</topic><topic>Reaction mechanisms</topic><topic>Resists</topic><toplevel>online_resources</toplevel><creatorcontrib>Soucie, Deanna</creatorcontrib><creatorcontrib>Earley, William</creatorcontrib><creatorcontrib>Hosoi, Kenji</creatorcontrib><creatorcontrib>Takahashi, Arata</creatorcontrib><creatorcontrib>Aoki, Takashi</creatorcontrib><creatorcontrib>Cardineau, Brian</creatorcontrib><creatorcontrib>Miyauchi, Koichi</creatorcontrib><creatorcontrib>Brainard, Robert</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Soucie, Deanna</au><au>Earley, William</au><au>Hosoi, Kenji</au><au>Takahashi, Arata</au><au>Aoki, Takashi</au><au>Cardineau, Brian</au><au>Miyauchi, Koichi</au><au>Brainard, Robert</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Higher-Order Lithography: Double-Deprotected Chemically Amplified Photoresists (DD-CAMP)</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2017-01-01</date><risdate>2017</risdate><volume>30</volume><issue>3</issue><spage>351</spage><epage>359</epage><pages>351-359</pages><issn>0914-9244</issn><eissn>1349-6336</eissn><abstract>The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction should be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.30.351</doi><tpages>9</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0914-9244 |
| ispartof | Journal of Photopolymer Science and Technology, 2017/06/26, Vol.30(3), pp.351-359 |
| issn | 0914-9244 1349-6336 |
| language | eng |
| recordid | cdi_proquest_journals_2232603654 |
| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese; Free Full-Text Journals in Chemistry |
| subjects | 193 nm DD-CAMP EUV Higher order Kinetics Organic chemistry Photoresist Photoresists Reaction kinetics Reaction mechanisms Resists |
| title | Higher-Order Lithography: Double-Deprotected Chemically Amplified Photoresists (DD-CAMP) |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T22%3A52%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Higher-Order%20Lithography:%20Double-Deprotected%20Chemically%20Amplified%20Photoresists%20(DD-CAMP)&rft.jtitle=Journal%20of%20Photopolymer%20Science%20and%20Technology&rft.au=Soucie,%20Deanna&rft.date=2017-01-01&rft.volume=30&rft.issue=3&rft.spage=351&rft.epage=359&rft.pages=351-359&rft.issn=0914-9244&rft.eissn=1349-6336&rft_id=info:doi/10.2494/photopolymer.30.351&rft_dat=%3Cproquest_cross%3E2232603654%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2232603654&rft_id=info:pmid/&rfr_iscdi=true |