Fabrication of Sub-10 nm Metal Wire Circuits using Directed Self-Assembly of Block Copolymers

A novel half-pitch (HP) 10 nm physical-epitaxial frequency multiplication process using a high chi (χ) lamellar block copolymer was developed to carry out process verification of directed self-assembly lithography on a 300 mm wafer for practical semiconductor device manufacturing. Electrically open...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2016/06/21, Vol.29(5), pp.647-652
Hauptverfasser:	Azuma, Tsukasa, Seino, Yuriko, Sato, Hironobu, Kasahara, Yusuke, Kobayashi, Katsutoshi, Kubota, Hitoshi, Kanai, Hideki, Kodera, Katsuyoshi, Kihara, Naoko, Kawamonzen, Yoshiaki, Minegishi, Shinya, Miyagi, Ken, Yamano, Hitoshi, Tobana, Toshikatsu, Shiraishi, Masayuki, Nomura, Satoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	block copolymer Block copolymers Circuits directed self-assembly Electric wire Epitaxy lithography metal wire circuit Multiplication Roughness Self-assembly sub-10 nm Viability Wire
Online-Zugang:	Volltext
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