Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition
Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic f...
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| Veröffentlicht in: | Journal of the Ceramic Society of Japan 2018/11/01, Vol.126(11), pp.925-930 |
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| container_issue | 11 |
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| container_title | Journal of the Ceramic Society of Japan |
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| creator | NAKABAYASHI, Yuji YAMADA, Satoru ITOH, Satoshi KAWAE, Takeshi |
| description | Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system. |
| doi_str_mv | 10.2109/jcersj2.18082 |
| format | Article |
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The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.</description><identifier>ISSN: 1882-0743</identifier><identifier>EISSN: 1348-6535</identifier><identifier>DOI: 10.2109/jcersj2.18082</identifier><language>eng</language><publisher>Tokyo: The Ceramic Society of Japan</publisher><subject>Atomic force microscopy ; Chemical vapor deposition ; Crystal growth ; Crystal structure ; Crystallinity ; Crystals ; Epitaxial growth ; Gallium oxide ; Gallium oxides ; Lattice parameters ; Mist chemical vapor deposition ; Morphology ; Organic chemistry ; Precursor concentration ; Precursors ; Sapphire ; Single crystals ; Surface morphology ; Surface roughness ; Thin films ; Ultrawideband ; Wide bandgap semiconductors ; X-ray diffraction</subject><ispartof>Journal of the Ceramic Society of Japan, 2018/11/01, Vol.126(11), pp.925-930</ispartof><rights>2018 The Ceramic Society of Japan</rights><rights>Copyright Japan Science and Technology Agency 2018</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-c718a163ac891e798ce34a3f90351a32abc55ec5b161243bc159f161bb6317ae3</citedby><cites>FETCH-LOGICAL-c324t-c718a163ac891e798ce34a3f90351a32abc55ec5b161243bc159f161bb6317ae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1876,27903,27904</link.rule.ids></links><search><creatorcontrib>NAKABAYASHI, Yuji</creatorcontrib><creatorcontrib>YAMADA, Satoru</creatorcontrib><creatorcontrib>ITOH, Satoshi</creatorcontrib><creatorcontrib>KAWAE, Takeshi</creatorcontrib><title>Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition</title><title>Journal of the Ceramic Society of Japan</title><addtitle>J. Ceram. Soc. Japan</addtitle><description>Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.</description><subject>Atomic force microscopy</subject><subject>Chemical vapor deposition</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Crystals</subject><subject>Epitaxial growth</subject><subject>Gallium oxide</subject><subject>Gallium oxides</subject><subject>Lattice parameters</subject><subject>Mist chemical vapor deposition</subject><subject>Morphology</subject><subject>Organic chemistry</subject><subject>Precursor concentration</subject><subject>Precursors</subject><subject>Sapphire</subject><subject>Single crystals</subject><subject>Surface morphology</subject><subject>Surface roughness</subject><subject>Thin films</subject><subject>Ultrawideband</subject><subject>Wide bandgap semiconductors</subject><subject>X-ray diffraction</subject><issn>1882-0743</issn><issn>1348-6535</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpFkctu1TAQhiMEEqWwZG-JdUps5-IsUUVLpUrdwNqa-IxPHCV2GDugvA8vwIvwTPXpqcpqRqPvn9tfFB95dSV41X-eDFKcxBVXlRKvigsua1W2jWxe51wpUVZdLd8W72KcqqoVtVQXxZ87b-cNvUEWLFsJzUYxEDMhl3wiSC54Bv7AjhR-p5Elt2TUszQiixtZyMol0DqGORz3J9LQHhPMs_Mu7ae2__6WtyAeZBY5z6ybl8gsDOQMJDywYWeLi4mZEZdcmtkvWPMKB1xDdKf574s3FuaIH57jZfHj5uv362_l_cPt3fWX-9JIUafSdFwBbyUY1XPsemVQ1iBtX8mGgxQwmKZB0wy85fn6wfCmtzkfhlbyDlBeFp_OfVcKPzeMSU9hI59HaiGkaHrRyTpT5ZkyFGIktHoltwDtmlf6ZIR-NkI_GZH5mzM_5a8c8YUGSs7M-J8Wreb8HE7CF8CMQBq9fATgpZnW</recordid><startdate>20181101</startdate><enddate>20181101</enddate><creator>NAKABAYASHI, Yuji</creator><creator>YAMADA, Satoru</creator><creator>ITOH, Satoshi</creator><creator>KAWAE, Takeshi</creator><general>The Ceramic Society of Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20181101</creationdate><title>Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition</title><author>NAKABAYASHI, Yuji ; YAMADA, Satoru ; ITOH, Satoshi ; KAWAE, Takeshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-c718a163ac891e798ce34a3f90351a32abc55ec5b161243bc159f161bb6317ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Atomic force microscopy</topic><topic>Chemical vapor deposition</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Crystals</topic><topic>Epitaxial growth</topic><topic>Gallium oxide</topic><topic>Gallium oxides</topic><topic>Lattice parameters</topic><topic>Mist chemical vapor deposition</topic><topic>Morphology</topic><topic>Organic chemistry</topic><topic>Precursor concentration</topic><topic>Precursors</topic><topic>Sapphire</topic><topic>Single crystals</topic><topic>Surface morphology</topic><topic>Surface roughness</topic><topic>Thin films</topic><topic>Ultrawideband</topic><topic>Wide bandgap semiconductors</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NAKABAYASHI, Yuji</creatorcontrib><creatorcontrib>YAMADA, Satoru</creatorcontrib><creatorcontrib>ITOH, Satoshi</creatorcontrib><creatorcontrib>KAWAE, Takeshi</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Ceramic Society of Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NAKABAYASHI, Yuji</au><au>YAMADA, Satoru</au><au>ITOH, Satoshi</au><au>KAWAE, Takeshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition</atitle><jtitle>Journal of the Ceramic Society of Japan</jtitle><addtitle>J. Ceram. Soc. Japan</addtitle><date>2018-11-01</date><risdate>2018</risdate><volume>126</volume><issue>11</issue><spage>925</spage><epage>930</epage><pages>925-930</pages><issn>1882-0743</issn><eissn>1348-6535</eissn><abstract>Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.</abstract><cop>Tokyo</cop><pub>The Ceramic Society of Japan</pub><doi>10.2109/jcersj2.18082</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of the Ceramic Society of Japan, 2018/11/01, Vol.126(11), pp.925-930 |
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| language | eng |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Atomic force microscopy Chemical vapor deposition Crystal growth Crystal structure Crystallinity Crystals Epitaxial growth Gallium oxide Gallium oxides Lattice parameters Mist chemical vapor deposition Morphology Organic chemistry Precursor concentration Precursors Sapphire Single crystals Surface morphology Surface roughness Thin films Ultrawideband Wide bandgap semiconductors X-ray diffraction |
| title | Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition |
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