Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

It is known that the interface nitrogen density of the 4H-SiC Si-face, C-face, and a-face increases as a result of the NO-POA process, that the electron mobility increases as the nitrogen density increases, and that each face has a different interface nitrogen saturation density. In contrast, the an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	E-journal of surface science and nanotechnology 2017/10/31, Vol.15, pp.109-114
Hauptverfasser:	Hamada, Kimimori, Mikami, Akira, Naruoka, Hideki, Yamabe, Kikuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Density Electron mobility MOSFETs Nitric oxide Nitrides Nitrogen Nitrogen oxides Oxidation Saturation Semiconductor-insulator interfaces Silicon carbide Silicon dioxide Silicon oxides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!