Annealing effect and leakage current transport mechanisms of high k ternary GdAlOx gate dielectrics

In this work, ternary GdAlOx (GAO) thin films as new gate dielectric materials were offered by magnetron sputtering. The microstructure, band gap and electrical properties of ternary GAO gate dielectric thin films as functions of annealing temperatures were measured. It can be noted that annealing a...

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