Density Functional Theory Study on Defect Behavior Related to the Bulk Lifetime of Silicon Crystals for Power Device Application

Among the insulated‐gate bipolar transistors (IGBTs) and PIN junction diodes, there are devices that the recombination centers, namely lifetime‐control defects, are introduced into phosphorus (P) doped n‐type silicon (Si) crystals by electron beam irradiation. The lifetime‐control defects are consid...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2019-05, Vol.216 (10), p.n/a
Hauptverfasser:	Tsuchiya, Daiki, Sueoka, Koji, Yamamoto, Hidekazu
Format:	Artikel
Sprache:	eng
Schlagworte:	Bulk density Carbon Control charts Controllability Crystal defects Defects Density functional theory Electron beams Electron irradiation Insulated gate bipolar transistors Junction diodes lifetime‐control defect Mathematical analysis Phosphorus power device Semiconductor devices Silicon silicon crystals Stability Vacancies
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