Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions
[Display omitted] •The optimum X3+–Sn4+ substitution (X = Ga and In) favored the best p-type conductivity.•The lowest resistivity of 7.51% for the Ga-doped SnO2 film was due to the hole concentration.•The lowest resistivity of 6.29% for the In-doped SnO2 film was optimized by the hole mobility.•The...
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| Veröffentlicht in: | Journal of photochemistry and photobiology. A, Chemistry. Chemistry., 2019-05, Vol.376, p.88-99 |
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| creator | Le, Tran Dang, Huu Phuc Duong, Anh Quang Luc, Quang Ho |
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•The optimum X3+–Sn4+ substitution (X = Ga and In) favored the best p-type conductivity.•The lowest resistivity of 7.51% for the Ga-doped SnO2 film was due to the hole concentration.•The lowest resistivity of 6.29% for the In-doped SnO2 film was optimized by the hole mobility.•The optimum In content in the SnO2 lattice reduced the lattice distortion, but Ga did not.•The I–V characteristics of the In/XTO/n-Si/In devices under illumination were photodiode-like.
To achieve the best p-type conductive properties of X-doped SnO2 (X = Ga, In) SnO2 film, a 9% wt X2O3 in SnO2 target is the best content for substitution at X sites in the SnO2 host lattice by X dopant where optimum In content replaces Sn, eliminating the lattice distortion in undoped SnO2 film. Optimum Ga content that replaces Sn enhances the lattice distortion but does not break the host lattice. The Ga3+–Sn2+ and In3+–Sn2+ substitution was verified using measurements such as X-ray photoelectron spectroscopy, photoluminescence, and ultraviolet-visible spectroscopy; the data for the (110) to (101) tetragonal rutile lattice plane changes indicated this replacement. The best p-type conductive properties achieved were 3.0 × 10−1 Ω cm, 6.20 × 1018 cm−3, and 3.01 cm2 V−1 s−1, respectively, for GTO. The respective values of the TIO films were 2.6 × 10−1 Ω cm, 1.24 × 1018 cm−3, and 19.35 cm2 V−1 s−1 for the resistivity, hole concentration, and hole mobility, respectively. The I–V characteristics of the In/p-GTO/n-Si/In and In/p-TIO/n-Si/In devices under illumination showed the p-type conductive properties of the GTO and TIO films. |
| doi_str_mv | 10.1016/j.jphotochem.2019.03.003 |
| format | Article |
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•The optimum X3+–Sn4+ substitution (X = Ga and In) favored the best p-type conductivity.•The lowest resistivity of 7.51% for the Ga-doped SnO2 film was due to the hole concentration.•The lowest resistivity of 6.29% for the In-doped SnO2 film was optimized by the hole mobility.•The optimum In content in the SnO2 lattice reduced the lattice distortion, but Ga did not.•The I–V characteristics of the In/XTO/n-Si/In devices under illumination were photodiode-like.
To achieve the best p-type conductive properties of X-doped SnO2 (X = Ga, In) SnO2 film, a 9% wt X2O3 in SnO2 target is the best content for substitution at X sites in the SnO2 host lattice by X dopant where optimum In content replaces Sn, eliminating the lattice distortion in undoped SnO2 film. Optimum Ga content that replaces Sn enhances the lattice distortion but does not break the host lattice. The Ga3+–Sn2+ and In3+–Sn2+ substitution was verified using measurements such as X-ray photoelectron spectroscopy, photoluminescence, and ultraviolet-visible spectroscopy; the data for the (110) to (101) tetragonal rutile lattice plane changes indicated this replacement. The best p-type conductive properties achieved were 3.0 × 10−1 Ω cm, 6.20 × 1018 cm−3, and 3.01 cm2 V−1 s−1, respectively, for GTO. The respective values of the TIO films were 2.6 × 10−1 Ω cm, 1.24 × 1018 cm−3, and 19.35 cm2 V−1 s−1 for the resistivity, hole concentration, and hole mobility, respectively. The I–V characteristics of the In/p-GTO/n-Si/In and In/p-TIO/n-Si/In devices under illumination showed the p-type conductive properties of the GTO and TIO films.</description><identifier>ISSN: 1010-6030</identifier><identifier>EISSN: 1873-2666</identifier><identifier>DOI: 10.1016/j.jphotochem.2019.03.003</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>DC magnetron sputtering ; Distortion ; Dopants ; Electrical junctions ; Hole mobility ; Optical properties ; p-type transparent conducting oxide ; p-type X-doped SnO2 (X = Ga and In) thin film ; Photoelectron spectroscopy ; Photoelectrons ; Photoluminescence ; Photons ; Silicon ; Spectroscopy ; Spectrum analysis ; Substitutes ; Tin ; Tin dioxide ; X-ray diffraction ; X-ray photoelectron spectroscopy</subject><ispartof>Journal of photochemistry and photobiology. A, Chemistry., 2019-05, Vol.376, p.88-99</ispartof><rights>2019 Elsevier B.V.</rights><rights>Copyright Elsevier BV May 1, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c276t-e7ac10f1c9efccdd30c62f2608dcded9e0f4fea40ab15ef4316c51fe4e6f889e3</citedby><cites>FETCH-LOGICAL-c276t-e7ac10f1c9efccdd30c62f2608dcded9e0f4fea40ab15ef4316c51fe4e6f889e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jphotochem.2019.03.003$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Le, Tran</creatorcontrib><creatorcontrib>Dang, Huu Phuc</creatorcontrib><creatorcontrib>Duong, Anh Quang</creatorcontrib><creatorcontrib>Luc, Quang Ho</creatorcontrib><title>Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions</title><title>Journal of photochemistry and photobiology. A, Chemistry.</title><description>[Display omitted]
•The optimum X3+–Sn4+ substitution (X = Ga and In) favored the best p-type conductivity.•The lowest resistivity of 7.51% for the Ga-doped SnO2 film was due to the hole concentration.•The lowest resistivity of 6.29% for the In-doped SnO2 film was optimized by the hole mobility.•The optimum In content in the SnO2 lattice reduced the lattice distortion, but Ga did not.•The I–V characteristics of the In/XTO/n-Si/In devices under illumination were photodiode-like.
To achieve the best p-type conductive properties of X-doped SnO2 (X = Ga, In) SnO2 film, a 9% wt X2O3 in SnO2 target is the best content for substitution at X sites in the SnO2 host lattice by X dopant where optimum In content replaces Sn, eliminating the lattice distortion in undoped SnO2 film. Optimum Ga content that replaces Sn enhances the lattice distortion but does not break the host lattice. The Ga3+–Sn2+ and In3+–Sn2+ substitution was verified using measurements such as X-ray photoelectron spectroscopy, photoluminescence, and ultraviolet-visible spectroscopy; the data for the (110) to (101) tetragonal rutile lattice plane changes indicated this replacement. The best p-type conductive properties achieved were 3.0 × 10−1 Ω cm, 6.20 × 1018 cm−3, and 3.01 cm2 V−1 s−1, respectively, for GTO. The respective values of the TIO films were 2.6 × 10−1 Ω cm, 1.24 × 1018 cm−3, and 19.35 cm2 V−1 s−1 for the resistivity, hole concentration, and hole mobility, respectively. The I–V characteristics of the In/p-GTO/n-Si/In and In/p-TIO/n-Si/In devices under illumination showed the p-type conductive properties of the GTO and TIO films.</description><subject>DC magnetron sputtering</subject><subject>Distortion</subject><subject>Dopants</subject><subject>Electrical junctions</subject><subject>Hole mobility</subject><subject>Optical properties</subject><subject>p-type transparent conducting oxide</subject><subject>p-type X-doped SnO2 (X = Ga and In) thin film</subject><subject>Photoelectron spectroscopy</subject><subject>Photoelectrons</subject><subject>Photoluminescence</subject><subject>Photons</subject><subject>Silicon</subject><subject>Spectroscopy</subject><subject>Spectrum analysis</subject><subject>Substitutes</subject><subject>Tin</subject><subject>Tin dioxide</subject><subject>X-ray diffraction</subject><subject>X-ray photoelectron spectroscopy</subject><issn>1010-6030</issn><issn>1873-2666</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFUc1qFTEUHsSCtfoOATcKZnqSSXPnCi601LZQ6OK20F1IkxNvhnuTMckI3flGPpA7n8RMb6nddRHOOXDO95OvaQiDlgGTh0M7jOtYolnjtuXAli10LUD3otln_aKjXEr5svbAgEro4FXzOucBAIQQbL_5c-IcmkKiI6tA83Sbiy9TQUtONdHBkvNAbBx1KMTEULDWGEhZI8klTaZMSW8-EtxUjOTN3M9HcSzzQMYUR0zFY54JRlruRiQ3tAJWglW45OT9zd9fvz_X90j3gTi_2eZP5AqrlvD9nuze4o4lBm8IPqp-inYY6MqTYQqm-Bjym2bP6U3Gtw_1oLn-dnJ1fEYvLk_Pj79cUMMXslBcaMPAMbNEZ4y1HRjJHZfQW2PRLhGccKgF6Ft2hE50TJoj5lCgdH2_xO6gebfDrXZ_TFW1GuKUQqVUnHPWAxOC161-t2VSzDmhU2PyW53uFAM1R6kG9T9KNUepoFM1ynr6dXeK1cVPj0ll4zEYtD7Vb1A2-udB_gHASrK3</recordid><startdate>20190501</startdate><enddate>20190501</enddate><creator>Le, Tran</creator><creator>Dang, Huu Phuc</creator><creator>Duong, Anh Quang</creator><creator>Luc, Quang Ho</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QL</scope><scope>7T7</scope><scope>7U9</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>H94</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20190501</creationdate><title>Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions</title><author>Le, Tran ; Dang, Huu Phuc ; Duong, Anh Quang ; Luc, Quang Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c276t-e7ac10f1c9efccdd30c62f2608dcded9e0f4fea40ab15ef4316c51fe4e6f889e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>DC magnetron sputtering</topic><topic>Distortion</topic><topic>Dopants</topic><topic>Electrical junctions</topic><topic>Hole mobility</topic><topic>Optical properties</topic><topic>p-type transparent conducting oxide</topic><topic>p-type X-doped SnO2 (X = Ga and In) thin film</topic><topic>Photoelectron spectroscopy</topic><topic>Photoelectrons</topic><topic>Photoluminescence</topic><topic>Photons</topic><topic>Silicon</topic><topic>Spectroscopy</topic><topic>Spectrum analysis</topic><topic>Substitutes</topic><topic>Tin</topic><topic>Tin dioxide</topic><topic>X-ray diffraction</topic><topic>X-ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Le, Tran</creatorcontrib><creatorcontrib>Dang, Huu Phuc</creatorcontrib><creatorcontrib>Duong, Anh Quang</creatorcontrib><creatorcontrib>Luc, Quang Ho</creatorcontrib><collection>CrossRef</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Virology and AIDS Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>Journal of photochemistry and photobiology. A, Chemistry.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Le, Tran</au><au>Dang, Huu Phuc</au><au>Duong, Anh Quang</au><au>Luc, Quang Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions</atitle><jtitle>Journal of photochemistry and photobiology. A, Chemistry.</jtitle><date>2019-05-01</date><risdate>2019</risdate><volume>376</volume><spage>88</spage><epage>99</epage><pages>88-99</pages><issn>1010-6030</issn><eissn>1873-2666</eissn><abstract>[Display omitted]
•The optimum X3+–Sn4+ substitution (X = Ga and In) favored the best p-type conductivity.•The lowest resistivity of 7.51% for the Ga-doped SnO2 film was due to the hole concentration.•The lowest resistivity of 6.29% for the In-doped SnO2 film was optimized by the hole mobility.•The optimum In content in the SnO2 lattice reduced the lattice distortion, but Ga did not.•The I–V characteristics of the In/XTO/n-Si/In devices under illumination were photodiode-like.
To achieve the best p-type conductive properties of X-doped SnO2 (X = Ga, In) SnO2 film, a 9% wt X2O3 in SnO2 target is the best content for substitution at X sites in the SnO2 host lattice by X dopant where optimum In content replaces Sn, eliminating the lattice distortion in undoped SnO2 film. Optimum Ga content that replaces Sn enhances the lattice distortion but does not break the host lattice. The Ga3+–Sn2+ and In3+–Sn2+ substitution was verified using measurements such as X-ray photoelectron spectroscopy, photoluminescence, and ultraviolet-visible spectroscopy; the data for the (110) to (101) tetragonal rutile lattice plane changes indicated this replacement. The best p-type conductive properties achieved were 3.0 × 10−1 Ω cm, 6.20 × 1018 cm−3, and 3.01 cm2 V−1 s−1, respectively, for GTO. The respective values of the TIO films were 2.6 × 10−1 Ω cm, 1.24 × 1018 cm−3, and 19.35 cm2 V−1 s−1 for the resistivity, hole concentration, and hole mobility, respectively. The I–V characteristics of the In/p-GTO/n-Si/In and In/p-TIO/n-Si/In devices under illumination showed the p-type conductive properties of the GTO and TIO films.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jphotochem.2019.03.003</doi><tpages>12</tpages></addata></record> |
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| ispartof | Journal of photochemistry and photobiology. A, Chemistry., 2019-05, Vol.376, p.88-99 |
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| subjects | DC magnetron sputtering Distortion Dopants Electrical junctions Hole mobility Optical properties p-type transparent conducting oxide p-type X-doped SnO2 (X = Ga and In) thin film Photoelectron spectroscopy Photoelectrons Photoluminescence Photons Silicon Spectroscopy Spectrum analysis Substitutes Tin Tin dioxide X-ray diffraction X-ray photoelectron spectroscopy |
| title | Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions |
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