Study of wet and dry etching processes for antimonide-based photonic ICs

We report on the dry etch process parameters and the associated etch rates for target and mask materials, as well as surface roughness in an inductively coupled plasma (ICP) for the (AlGaIn)(AsSb)-compounds. The essential chemistry is based on Cl2 with the addition of N2 for sidewall passivation. Th...

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Veröffentlicht in:	Optical materials express 2019-04, Vol.9 (4), p.1786
Hauptverfasser:	Arafin, Shamsul, McFadden, Anthony P., Paul, Banaful, Hasan, Syed M. N., Gupta, James A., Palmstrøm, Chris J., Coldren, Larry A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronic devices Etchants Etching High aspect ratio Inductively coupled plasma Optoelectronic devices Organic chemistry Photonics Process parameters Reflectance Selectivity Substrates Surface roughness Target masking
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