Acceleration of wettability switching on TiO2 thin films under ultraviolet irradiation and direct current bias voltage
This study reports the results of combining ultraviolet (UV) light irradiation and direct current (DC) bias voltage on the acceleration of the photoresponsive wettability switching of TiO2 thin films. According to the mechanism of wettability switching reported previously, hydrophilic surface termin...
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Veröffentlicht in: | Surface & coatings technology 2019-04, Vol.363, p.80-86 |
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description | This study reports the results of combining ultraviolet (UV) light irradiation and direct current (DC) bias voltage on the acceleration of the photoresponsive wettability switching of TiO2 thin films. According to the mechanism of wettability switching reported previously, hydrophilic surface termination is caused by the reaction between the photogenerated holes and bridging oxygen sites on the TiO2 surface. In this study, we investigate the effect of applying DC bias voltage to TiO2 thin films to intentionally polarize holes toward the TiO2 surface for increasing and accelerating the generation of absorption sites. The wettability switching width of the contact angles from the hydrophobic state to hydrophilic state was virtually doubled and the switching time of the contact angles was reduced to approximately 1/10th by combining a DC bias voltage of 0.9 V and UV irradiation, compared to TiO2 thin films processed only with UV irradiation. This photoresponsive wettability switching based on TiO2 photocatalysts is a promising technology for wireless liquid manipulation as amplification of the switching width and acceleration of the switching response of the surfaces are important for practical applications.
•Wettability switching time from hydrophobic state to hydrophilic state was shortened to approximately 1/10 by combination of applying a DC-bias voltage at 0.9 V and UV irradiation.•Wettability recovery was shortened to 1/6 and the switching width of the contact angles was almost doubled by applying a DC voltage of −0.3 V even under dark.•TiO2 thin films with strong XRD peaks corresponding to rutile crystallographic structure showed faster increase in contact angles with increasing dark-storage time. |
doi_str_mv | 10.1016/j.surfcoat.2019.02.043 |
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•Wettability switching time from hydrophobic state to hydrophilic state was shortened to approximately 1/10 by combination of applying a DC-bias voltage at 0.9 V and UV irradiation.•Wettability recovery was shortened to 1/6 and the switching width of the contact angles was almost doubled by applying a DC voltage of −0.3 V even under dark.•TiO2 thin films with strong XRD peaks corresponding to rutile crystallographic structure showed faster increase in contact angles with increasing dark-storage time.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2019.02.043</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Acceleration ; Anatase ; Bias ; Contact angle ; DC-bias voltage ; Direct current ; Electric potential ; Hydrophilicity ; Light irradiation ; Plasma ; Reactive sputtering ; Rutile ; Silicon ; Switching ; Thin films ; TiO2 ; Titanium dioxide ; Ultraviolet radiation ; Wettability ; Wettability switching</subject><ispartof>Surface & coatings technology, 2019-04, Vol.363, p.80-86</ispartof><rights>2019 Elsevier B.V.</rights><rights>Copyright Elsevier BV Apr 15, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-5f6bb555b53ed7162f7e597d58a3939b33c562812af0d2b4a73e4ab0f43a3aa3</citedby><cites>FETCH-LOGICAL-c336t-5f6bb555b53ed7162f7e597d58a3939b33c562812af0d2b4a73e4ab0f43a3aa3</cites><orcidid>0000-0001-6716-776X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0257897219301884$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Kobayashi, Taizo</creatorcontrib><creatorcontrib>Konishi, Satoshi</creatorcontrib><title>Acceleration of wettability switching on TiO2 thin films under ultraviolet irradiation and direct current bias voltage</title><title>Surface & coatings technology</title><description>This study reports the results of combining ultraviolet (UV) light irradiation and direct current (DC) bias voltage on the acceleration of the photoresponsive wettability switching of TiO2 thin films. According to the mechanism of wettability switching reported previously, hydrophilic surface termination is caused by the reaction between the photogenerated holes and bridging oxygen sites on the TiO2 surface. In this study, we investigate the effect of applying DC bias voltage to TiO2 thin films to intentionally polarize holes toward the TiO2 surface for increasing and accelerating the generation of absorption sites. The wettability switching width of the contact angles from the hydrophobic state to hydrophilic state was virtually doubled and the switching time of the contact angles was reduced to approximately 1/10th by combining a DC bias voltage of 0.9 V and UV irradiation, compared to TiO2 thin films processed only with UV irradiation. This photoresponsive wettability switching based on TiO2 photocatalysts is a promising technology for wireless liquid manipulation as amplification of the switching width and acceleration of the switching response of the surfaces are important for practical applications.
•Wettability switching time from hydrophobic state to hydrophilic state was shortened to approximately 1/10 by combination of applying a DC-bias voltage at 0.9 V and UV irradiation.•Wettability recovery was shortened to 1/6 and the switching width of the contact angles was almost doubled by applying a DC voltage of −0.3 V even under dark.•TiO2 thin films with strong XRD peaks corresponding to rutile crystallographic structure showed faster increase in contact angles with increasing dark-storage time.</description><subject>Acceleration</subject><subject>Anatase</subject><subject>Bias</subject><subject>Contact angle</subject><subject>DC-bias voltage</subject><subject>Direct current</subject><subject>Electric potential</subject><subject>Hydrophilicity</subject><subject>Light irradiation</subject><subject>Plasma</subject><subject>Reactive sputtering</subject><subject>Rutile</subject><subject>Silicon</subject><subject>Switching</subject><subject>Thin films</subject><subject>TiO2</subject><subject>Titanium dioxide</subject><subject>Ultraviolet radiation</subject><subject>Wettability</subject><subject>Wettability switching</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkM1LxDAQxYMouK7-CxLw3JqPptncFPELBC97D9N0ollqo0m64n9vpXr2NAzz3hvej5BzzmrOeHu5q_OUvItQasG4qZmoWSMPyIpvtKmkbPQhWTGhdLUxWhyTk5x3jDGuTbMi-2vncMAEJcSRRk8_sRTowhDKF82fobjXML7Q-bYNz4KWeaM-DG-ZTmOPiU5DSbAPccBCQ0rQhyUJxp72IaEr1E0p4VhoFyDTfRwKvOApOfIwZDz7nWuyvbvd3jxUT8_3jzfXT5WTsi2V8m3XKaU6JbHXvBVeozK6VxuQRppOSqdaseECPOtF14CW2EDHfCNBAsg1uVhi31P8mDAXu4tTGuePVgjeGqaNkrOqXVQuxZwTevuewhukL8uZ_UFsd_YPsf1BbJmwM-LZeLUYca6wD5hsdgFHh0tz28fwX8Q3bkmLBQ</recordid><startdate>20190415</startdate><enddate>20190415</enddate><creator>Kobayashi, Taizo</creator><creator>Konishi, Satoshi</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-6716-776X</orcidid></search><sort><creationdate>20190415</creationdate><title>Acceleration of wettability switching on TiO2 thin films under ultraviolet irradiation and direct current bias voltage</title><author>Kobayashi, Taizo ; Konishi, Satoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-5f6bb555b53ed7162f7e597d58a3939b33c562812af0d2b4a73e4ab0f43a3aa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Acceleration</topic><topic>Anatase</topic><topic>Bias</topic><topic>Contact angle</topic><topic>DC-bias voltage</topic><topic>Direct current</topic><topic>Electric potential</topic><topic>Hydrophilicity</topic><topic>Light irradiation</topic><topic>Plasma</topic><topic>Reactive sputtering</topic><topic>Rutile</topic><topic>Silicon</topic><topic>Switching</topic><topic>Thin films</topic><topic>TiO2</topic><topic>Titanium dioxide</topic><topic>Ultraviolet radiation</topic><topic>Wettability</topic><topic>Wettability switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kobayashi, Taizo</creatorcontrib><creatorcontrib>Konishi, Satoshi</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kobayashi, Taizo</au><au>Konishi, Satoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Acceleration of wettability switching on TiO2 thin films under ultraviolet irradiation and direct current bias voltage</atitle><jtitle>Surface & coatings technology</jtitle><date>2019-04-15</date><risdate>2019</risdate><volume>363</volume><spage>80</spage><epage>86</epage><pages>80-86</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><abstract>This study reports the results of combining ultraviolet (UV) light irradiation and direct current (DC) bias voltage on the acceleration of the photoresponsive wettability switching of TiO2 thin films. According to the mechanism of wettability switching reported previously, hydrophilic surface termination is caused by the reaction between the photogenerated holes and bridging oxygen sites on the TiO2 surface. In this study, we investigate the effect of applying DC bias voltage to TiO2 thin films to intentionally polarize holes toward the TiO2 surface for increasing and accelerating the generation of absorption sites. The wettability switching width of the contact angles from the hydrophobic state to hydrophilic state was virtually doubled and the switching time of the contact angles was reduced to approximately 1/10th by combining a DC bias voltage of 0.9 V and UV irradiation, compared to TiO2 thin films processed only with UV irradiation. This photoresponsive wettability switching based on TiO2 photocatalysts is a promising technology for wireless liquid manipulation as amplification of the switching width and acceleration of the switching response of the surfaces are important for practical applications.
•Wettability switching time from hydrophobic state to hydrophilic state was shortened to approximately 1/10 by combination of applying a DC-bias voltage at 0.9 V and UV irradiation.•Wettability recovery was shortened to 1/6 and the switching width of the contact angles was almost doubled by applying a DC voltage of −0.3 V even under dark.•TiO2 thin films with strong XRD peaks corresponding to rutile crystallographic structure showed faster increase in contact angles with increasing dark-storage time.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2019.02.043</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-6716-776X</orcidid></addata></record> |
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subjects | Acceleration Anatase Bias Contact angle DC-bias voltage Direct current Electric potential Hydrophilicity Light irradiation Plasma Reactive sputtering Rutile Silicon Switching Thin films TiO2 Titanium dioxide Ultraviolet radiation Wettability Wettability switching |
title | Acceleration of wettability switching on TiO2 thin films under ultraviolet irradiation and direct current bias voltage |
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