Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si
In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning...
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Veröffentlicht in: | Surface & coatings technology 2019-04, Vol.364, p.16-21 |
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creator | Vesali, Newsha Erfanifam, Salim Jamilpanah, Loghman Hasheminejad, Meisam Rahmani, Yasser Mohseni, Seyed Majid |
description | In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning electron microscopy (SEM) imaging reveals that Cu seed nucleation occurs at the bottom and Ni seed nucleation starts on the wall of the silicon pores. The different growth models are explained according to the observed diffusion coefficients of ionic elements in electrodeposition baths. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) were used to further observe the structural characteristics of the grown microwires. We believe that this work can be used in developing microwires with desired structural characteristics.
•Deposition of Cu, Ni, and Cu/Ni microwires within porous Si was investigated•Nucleation of Cu seed occurred at the bottom of silicone pores•Nucleation of Ni seed started on the wall of silicone pores |
doi_str_mv | 10.1016/j.surfcoat.2019.02.071 |
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•Deposition of Cu, Ni, and Cu/Ni microwires within porous Si was investigated•Nucleation of Cu seed occurred at the bottom of silicone pores•Nucleation of Ni seed started on the wall of silicone pores</description><subject>Copper</subject><subject>Electrodeposition</subject><subject>Energy dispersive X ray spectroscopy</subject><subject>Growth models</subject><subject>Microwires</subject><subject>Nickel</subject><subject>Nucleation</subject><subject>Porous silicon</subject><subject>Scanning electron microscopy</subject><subject>X-ray diffraction</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLAzEQhYMoWKt_QQJe3e0k2WaTm1K0CkUF9RzSzSxNaZua7Lb4702pnj3NO8z3Zt4j5JpByYDJ0bJMfWybYLuSA9Ml8BJqdkIGTNW6EKKqT8kA-LgulK75OblIaQkArNbVgLxNY9h3CzrHhd35EGlo6aS_pS-e2o3LcpQVrrDpYnC4Dcl36OjaNxnzERPd-27hN3QbYugTffeX5Ky1q4RXv3NIPh8fPiZPxex1-jy5nxWNqKArpK1kCwhziQy1E8irLAQDjZIpqx0TYwt167iWjdLSKmeFcmOllOAZEkNyc_TdxvDVY-rMMvRxk08azpnkdQVa5y153Mr_phSxNdvo1zZ-Gwbm0J5Zmr_2zKE9A9zk9jJ4dwQxZ9h5jCY1HjcNupy66YwL_j-LH8KHe7U</recordid><startdate>20190425</startdate><enddate>20190425</enddate><creator>Vesali, Newsha</creator><creator>Erfanifam, Salim</creator><creator>Jamilpanah, Loghman</creator><creator>Hasheminejad, Meisam</creator><creator>Rahmani, Yasser</creator><creator>Mohseni, Seyed Majid</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-5626-533X</orcidid></search><sort><creationdate>20190425</creationdate><title>Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si</title><author>Vesali, Newsha ; Erfanifam, Salim ; Jamilpanah, Loghman ; Hasheminejad, Meisam ; Rahmani, Yasser ; Mohseni, Seyed Majid</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-6a46f0e0b6e1e9d3e24e1e3109e618a9d135a07fd296c896a8da38d588832b6e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Copper</topic><topic>Electrodeposition</topic><topic>Energy dispersive X ray spectroscopy</topic><topic>Growth models</topic><topic>Microwires</topic><topic>Nickel</topic><topic>Nucleation</topic><topic>Porous silicon</topic><topic>Scanning electron microscopy</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vesali, Newsha</creatorcontrib><creatorcontrib>Erfanifam, Salim</creatorcontrib><creatorcontrib>Jamilpanah, Loghman</creatorcontrib><creatorcontrib>Hasheminejad, Meisam</creatorcontrib><creatorcontrib>Rahmani, Yasser</creatorcontrib><creatorcontrib>Mohseni, Seyed Majid</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vesali, Newsha</au><au>Erfanifam, Salim</au><au>Jamilpanah, Loghman</au><au>Hasheminejad, Meisam</au><au>Rahmani, Yasser</au><au>Mohseni, Seyed Majid</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si</atitle><jtitle>Surface & coatings technology</jtitle><date>2019-04-25</date><risdate>2019</risdate><volume>364</volume><spage>16</spage><epage>21</epage><pages>16-21</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><abstract>In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning electron microscopy (SEM) imaging reveals that Cu seed nucleation occurs at the bottom and Ni seed nucleation starts on the wall of the silicon pores. The different growth models are explained according to the observed diffusion coefficients of ionic elements in electrodeposition baths. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) were used to further observe the structural characteristics of the grown microwires. We believe that this work can be used in developing microwires with desired structural characteristics.
•Deposition of Cu, Ni, and Cu/Ni microwires within porous Si was investigated•Nucleation of Cu seed occurred at the bottom of silicone pores•Nucleation of Ni seed started on the wall of silicone pores</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2019.02.071</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-5626-533X</orcidid></addata></record> |
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subjects | Copper Electrodeposition Energy dispersive X ray spectroscopy Growth models Microwires Nickel Nucleation Porous silicon Scanning electron microscopy X-ray diffraction |
title | Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si |
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