Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si

In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Surface & coatings technology 2019-04, Vol.364, p.16-21
Hauptverfasser: Vesali, Newsha, Erfanifam, Salim, Jamilpanah, Loghman, Hasheminejad, Meisam, Rahmani, Yasser, Mohseni, Seyed Majid
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 21
container_issue
container_start_page 16
container_title Surface & coatings technology
container_volume 364
creator Vesali, Newsha
Erfanifam, Salim
Jamilpanah, Loghman
Hasheminejad, Meisam
Rahmani, Yasser
Mohseni, Seyed Majid
description In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning electron microscopy (SEM) imaging reveals that Cu seed nucleation occurs at the bottom and Ni seed nucleation starts on the wall of the silicon pores. The different growth models are explained according to the observed diffusion coefficients of ionic elements in electrodeposition baths. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) were used to further observe the structural characteristics of the grown microwires. We believe that this work can be used in developing microwires with desired structural characteristics. •Deposition of Cu, Ni, and Cu/Ni microwires within porous Si was investigated•Nucleation of Cu seed occurred at the bottom of silicone pores•Nucleation of Ni seed started on the wall of silicone pores
doi_str_mv 10.1016/j.surfcoat.2019.02.071
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2216274099</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0257897219302245</els_id><sourcerecordid>2216274099</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-6a46f0e0b6e1e9d3e24e1e3109e618a9d135a07fd296c896a8da38d588832b6e3</originalsourceid><addsrcrecordid>eNqFkEFLAzEQhYMoWKt_QQJe3e0k2WaTm1K0CkUF9RzSzSxNaZua7Lb4702pnj3NO8z3Zt4j5JpByYDJ0bJMfWybYLuSA9Ml8BJqdkIGTNW6EKKqT8kA-LgulK75OblIaQkArNbVgLxNY9h3CzrHhd35EGlo6aS_pS-e2o3LcpQVrrDpYnC4Dcl36OjaNxnzERPd-27hN3QbYugTffeX5Ky1q4RXv3NIPh8fPiZPxex1-jy5nxWNqKArpK1kCwhziQy1E8irLAQDjZIpqx0TYwt167iWjdLSKmeFcmOllOAZEkNyc_TdxvDVY-rMMvRxk08azpnkdQVa5y153Mr_phSxNdvo1zZ-Gwbm0J5Zmr_2zKE9A9zk9jJ4dwQxZ9h5jCY1HjcNupy66YwL_j-LH8KHe7U</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2216274099</pqid></control><display><type>article</type><title>Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si</title><source>Access via ScienceDirect (Elsevier)</source><creator>Vesali, Newsha ; Erfanifam, Salim ; Jamilpanah, Loghman ; Hasheminejad, Meisam ; Rahmani, Yasser ; Mohseni, Seyed Majid</creator><creatorcontrib>Vesali, Newsha ; Erfanifam, Salim ; Jamilpanah, Loghman ; Hasheminejad, Meisam ; Rahmani, Yasser ; Mohseni, Seyed Majid</creatorcontrib><description>In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning electron microscopy (SEM) imaging reveals that Cu seed nucleation occurs at the bottom and Ni seed nucleation starts on the wall of the silicon pores. The different growth models are explained according to the observed diffusion coefficients of ionic elements in electrodeposition baths. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) were used to further observe the structural characteristics of the grown microwires. We believe that this work can be used in developing microwires with desired structural characteristics. •Deposition of Cu, Ni, and Cu/Ni microwires within porous Si was investigated•Nucleation of Cu seed occurred at the bottom of silicone pores•Nucleation of Ni seed started on the wall of silicone pores</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2019.02.071</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Copper ; Electrodeposition ; Energy dispersive X ray spectroscopy ; Growth models ; Microwires ; Nickel ; Nucleation ; Porous silicon ; Scanning electron microscopy ; X-ray diffraction</subject><ispartof>Surface &amp; coatings technology, 2019-04, Vol.364, p.16-21</ispartof><rights>2019 Elsevier B.V.</rights><rights>Copyright Elsevier BV Apr 25, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-6a46f0e0b6e1e9d3e24e1e3109e618a9d135a07fd296c896a8da38d588832b6e3</citedby><cites>FETCH-LOGICAL-c340t-6a46f0e0b6e1e9d3e24e1e3109e618a9d135a07fd296c896a8da38d588832b6e3</cites><orcidid>0000-0001-5626-533X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.surfcoat.2019.02.071$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Vesali, Newsha</creatorcontrib><creatorcontrib>Erfanifam, Salim</creatorcontrib><creatorcontrib>Jamilpanah, Loghman</creatorcontrib><creatorcontrib>Hasheminejad, Meisam</creatorcontrib><creatorcontrib>Rahmani, Yasser</creatorcontrib><creatorcontrib>Mohseni, Seyed Majid</creatorcontrib><title>Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si</title><title>Surface &amp; coatings technology</title><description>In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning electron microscopy (SEM) imaging reveals that Cu seed nucleation occurs at the bottom and Ni seed nucleation starts on the wall of the silicon pores. The different growth models are explained according to the observed diffusion coefficients of ionic elements in electrodeposition baths. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) were used to further observe the structural characteristics of the grown microwires. We believe that this work can be used in developing microwires with desired structural characteristics. •Deposition of Cu, Ni, and Cu/Ni microwires within porous Si was investigated•Nucleation of Cu seed occurred at the bottom of silicone pores•Nucleation of Ni seed started on the wall of silicone pores</description><subject>Copper</subject><subject>Electrodeposition</subject><subject>Energy dispersive X ray spectroscopy</subject><subject>Growth models</subject><subject>Microwires</subject><subject>Nickel</subject><subject>Nucleation</subject><subject>Porous silicon</subject><subject>Scanning electron microscopy</subject><subject>X-ray diffraction</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLAzEQhYMoWKt_QQJe3e0k2WaTm1K0CkUF9RzSzSxNaZua7Lb4702pnj3NO8z3Zt4j5JpByYDJ0bJMfWybYLuSA9Ml8BJqdkIGTNW6EKKqT8kA-LgulK75OblIaQkArNbVgLxNY9h3CzrHhd35EGlo6aS_pS-e2o3LcpQVrrDpYnC4Dcl36OjaNxnzERPd-27hN3QbYugTffeX5Ky1q4RXv3NIPh8fPiZPxex1-jy5nxWNqKArpK1kCwhziQy1E8irLAQDjZIpqx0TYwt167iWjdLSKmeFcmOllOAZEkNyc_TdxvDVY-rMMvRxk08azpnkdQVa5y153Mr_phSxNdvo1zZ-Gwbm0J5Zmr_2zKE9A9zk9jJ4dwQxZ9h5jCY1HjcNupy66YwL_j-LH8KHe7U</recordid><startdate>20190425</startdate><enddate>20190425</enddate><creator>Vesali, Newsha</creator><creator>Erfanifam, Salim</creator><creator>Jamilpanah, Loghman</creator><creator>Hasheminejad, Meisam</creator><creator>Rahmani, Yasser</creator><creator>Mohseni, Seyed Majid</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-5626-533X</orcidid></search><sort><creationdate>20190425</creationdate><title>Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si</title><author>Vesali, Newsha ; Erfanifam, Salim ; Jamilpanah, Loghman ; Hasheminejad, Meisam ; Rahmani, Yasser ; Mohseni, Seyed Majid</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-6a46f0e0b6e1e9d3e24e1e3109e618a9d135a07fd296c896a8da38d588832b6e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Copper</topic><topic>Electrodeposition</topic><topic>Energy dispersive X ray spectroscopy</topic><topic>Growth models</topic><topic>Microwires</topic><topic>Nickel</topic><topic>Nucleation</topic><topic>Porous silicon</topic><topic>Scanning electron microscopy</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vesali, Newsha</creatorcontrib><creatorcontrib>Erfanifam, Salim</creatorcontrib><creatorcontrib>Jamilpanah, Loghman</creatorcontrib><creatorcontrib>Hasheminejad, Meisam</creatorcontrib><creatorcontrib>Rahmani, Yasser</creatorcontrib><creatorcontrib>Mohseni, Seyed Majid</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface &amp; coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vesali, Newsha</au><au>Erfanifam, Salim</au><au>Jamilpanah, Loghman</au><au>Hasheminejad, Meisam</au><au>Rahmani, Yasser</au><au>Mohseni, Seyed Majid</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si</atitle><jtitle>Surface &amp; coatings technology</jtitle><date>2019-04-25</date><risdate>2019</risdate><volume>364</volume><spage>16</spage><epage>21</epage><pages>16-21</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><abstract>In this paper, a systematic growth behavior of Cu, Ni and Cu/Ni microwire arrays in porous silicon (PSi) templates is presented. After preparation of PSi templates via anodizing in HF solution, such microwires are successfully grown into PSi templates by electrodeposition method. Systematic scanning electron microscopy (SEM) imaging reveals that Cu seed nucleation occurs at the bottom and Ni seed nucleation starts on the wall of the silicon pores. The different growth models are explained according to the observed diffusion coefficients of ionic elements in electrodeposition baths. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) were used to further observe the structural characteristics of the grown microwires. We believe that this work can be used in developing microwires with desired structural characteristics. •Deposition of Cu, Ni, and Cu/Ni microwires within porous Si was investigated•Nucleation of Cu seed occurred at the bottom of silicone pores•Nucleation of Ni seed started on the wall of silicone pores</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2019.02.071</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-5626-533X</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0257-8972
ispartof Surface & coatings technology, 2019-04, Vol.364, p.16-21
issn 0257-8972
1879-3347
language eng
recordid cdi_proquest_journals_2216274099
source Access via ScienceDirect (Elsevier)
subjects Copper
Electrodeposition
Energy dispersive X ray spectroscopy
Growth models
Microwires
Nickel
Nucleation
Porous silicon
Scanning electron microscopy
X-ray diffraction
title Growth behavior of Cu, Ni and Cu/Ni electrodeposited microwires within porous Si
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T22%3A31%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20behavior%20of%20Cu,%20Ni%20and%20Cu/Ni%20electrodeposited%20microwires%20within%20porous%20Si&rft.jtitle=Surface%20&%20coatings%20technology&rft.au=Vesali,%20Newsha&rft.date=2019-04-25&rft.volume=364&rft.spage=16&rft.epage=21&rft.pages=16-21&rft.issn=0257-8972&rft.eissn=1879-3347&rft_id=info:doi/10.1016/j.surfcoat.2019.02.071&rft_dat=%3Cproquest_cross%3E2216274099%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2216274099&rft_id=info:pmid/&rft_els_id=S0257897219302245&rfr_iscdi=true