Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B

•MBE growth of carbon doped GaAs-(1 1 1)B layers on a miscut substrate.•Carbon doping concentration from 1016cm-3 to 1020cm-3•Smooth GaAs(1 1 1)B surfaces (RMS0.3nm) up to NC1020cm-3 were achieved.•p-type behavior and electrically active donor incorporation up to NC≤1019cm-3.•The carbon ionization e...

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