The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
In the present study, firstly, a 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis( N , N -diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and go...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2019-06, Vol.30 (11), p.10408-10418 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Yıldırım, M. Erdoğan, A. Yüksel, Ö. F. Kuş, M. Can, M. Akın, Ü. Tuğluoğlu, N. |
| description | In the present study, firstly, a 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(
N
,
N
-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (
n
), barrier height (
Φ
B
) and series resistance (
R
s
) values of the prepared structure from the
I
-
V
data have been found at 1.08, 0.78 eV and 240 Ω at room temperature (300 K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220–380 K), the
Φ
b
0
and A* values from the ordinate intercept and the slope of the modified Richardson curve of
ln
I
0
/
T
2
-
q
2
σ
s
2
/
2
k
2
T
2
versus 1/
T
plot which has been found to be 0.97 eV and 114 A/cm
2
K
2
, respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal–organic layer-semiconductor diode as compared to the Au/n-Si metal–semiconductor (MS) diode. |
| doi_str_mv | 10.1007/s10854-019-01382-1 |
| format | Article |
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N
,
N
-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (
n
), barrier height (
Φ
B
) and series resistance (
R
s
) values of the prepared structure from the
I
-
V
data have been found at 1.08, 0.78 eV and 240 Ω at room temperature (300 K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220–380 K), the
Φ
b
0
and A* values from the ordinate intercept and the slope of the modified Richardson curve of
ln
I
0
/
T
2
-
q
2
σ
s
2
/
2
k
2
T
2
versus 1/
T
plot which has been found to be 0.97 eV and 114 A/cm
2
K
2
, respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal–organic layer-semiconductor diode as compared to the Au/n-Si metal–semiconductor (MS) diode.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-019-01382-1</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; College campuses ; Engineering ; Glass substrates ; Gold ; Interlayers ; Light emitting diodes ; Materials Science ; Normal distribution ; Optical and Electronic Materials ; Optical properties ; Organic compounds ; Semiconductor diodes ; Silicon substrates ; Spin coating ; Structural analysis ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 2019-06, Vol.30 (11), p.10408-10418</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2019). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-4ec4d83c248193cde71ecf440e2ed8c3ddd2f42c61f769b2b42e13ffb1ba6d43</citedby><cites>FETCH-LOGICAL-c319t-4ec4d83c248193cde71ecf440e2ed8c3ddd2f42c61f769b2b42e13ffb1ba6d43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-019-01382-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-019-01382-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Yıldırım, M.</creatorcontrib><creatorcontrib>Erdoğan, A.</creatorcontrib><creatorcontrib>Yüksel, Ö. F.</creatorcontrib><creatorcontrib>Kuş, M.</creatorcontrib><creatorcontrib>Can, M.</creatorcontrib><creatorcontrib>Akın, Ü.</creatorcontrib><creatorcontrib>Tuğluoğlu, N.</creatorcontrib><title>The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In the present study, firstly, a 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(
N
,
N
-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (
n
), barrier height (
Φ
B
) and series resistance (
R
s
) values of the prepared structure from the
I
-
V
data have been found at 1.08, 0.78 eV and 240 Ω at room temperature (300 K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220–380 K), the
Φ
b
0
and A* values from the ordinate intercept and the slope of the modified Richardson curve of
ln
I
0
/
T
2
-
q
2
σ
s
2
/
2
k
2
T
2
versus 1/
T
plot which has been found to be 0.97 eV and 114 A/cm
2
K
2
, respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal–organic layer-semiconductor diode as compared to the Au/n-Si metal–semiconductor (MS) diode.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>College campuses</subject><subject>Engineering</subject><subject>Glass substrates</subject><subject>Gold</subject><subject>Interlayers</subject><subject>Light emitting diodes</subject><subject>Materials Science</subject><subject>Normal distribution</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Organic compounds</subject><subject>Semiconductor diodes</subject><subject>Silicon substrates</subject><subject>Spin coating</subject><subject>Structural analysis</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9UbtKBDEUDaLg-vgBq4CNwkbzmlcp4gtEC7ewCzPJjRsZkzWZKabzM_wOP8kvMbqCncXl3ns4j-IgdMDoCaO0Ok2M1oUklDV5RM0J20AzVlSCyJo_bqIZbYqKyILzbbST0jOltJSinqH3xRJwmvywhOQSDhbLufx8-yBHzbwhxgU9TD1prontxxDBA-HzKuNTf9y5dHQ3v8vPagl-6lvveufhGIf4lG-NE7w4HbwZ9RAibr3BY4LvCDfgNmUAOz9A7NsJIg4en42nnjw4nFMN7KEt2_YJ9n_3LlpcXizOr8nt_dXN-dkt0YI1A5GgpamF5rJmjdAGKgbaSkmBg6m1MMZwK7kuma3KpuOd5MCEtR3r2tJIsYsO17arGF5HSIN6DmP0OVFxzkRZ8LLimcXXLB1DShGsWkX30sZJMaq-C1DrAlQuQP0UoFgWibUoZbJ_gvhn_Y_qC-OZieQ</recordid><startdate>20190601</startdate><enddate>20190601</enddate><creator>Yıldırım, M.</creator><creator>Erdoğan, A.</creator><creator>Yüksel, Ö. F.</creator><creator>Kuş, M.</creator><creator>Can, M.</creator><creator>Akın, Ü.</creator><creator>Tuğluoğlu, N.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20190601</creationdate><title>The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode</title><author>Yıldırım, M. ; Erdoğan, A. ; Yüksel, Ö. F. ; Kuş, M. ; Can, M. ; Akın, Ü. ; Tuğluoğlu, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-4ec4d83c248193cde71ecf440e2ed8c3ddd2f42c61f769b2b42e13ffb1ba6d43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>College campuses</topic><topic>Engineering</topic><topic>Glass substrates</topic><topic>Gold</topic><topic>Interlayers</topic><topic>Light emitting diodes</topic><topic>Materials Science</topic><topic>Normal distribution</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Organic compounds</topic><topic>Semiconductor diodes</topic><topic>Silicon substrates</topic><topic>Spin coating</topic><topic>Structural analysis</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yıldırım, M.</creatorcontrib><creatorcontrib>Erdoğan, A.</creatorcontrib><creatorcontrib>Yüksel, Ö. F.</creatorcontrib><creatorcontrib>Kuş, M.</creatorcontrib><creatorcontrib>Can, M.</creatorcontrib><creatorcontrib>Akın, Ü.</creatorcontrib><creatorcontrib>Tuğluoğlu, N.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yıldırım, M.</au><au>Erdoğan, A.</au><au>Yüksel, Ö. F.</au><au>Kuş, M.</au><au>Can, M.</au><au>Akın, Ü.</au><au>Tuğluoğlu, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2019-06-01</date><risdate>2019</risdate><volume>30</volume><issue>11</issue><spage>10408</spage><epage>10418</epage><pages>10408-10418</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In the present study, firstly, a 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(
N
,
N
-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (
n
), barrier height (
Φ
B
) and series resistance (
R
s
) values of the prepared structure from the
I
-
V
data have been found at 1.08, 0.78 eV and 240 Ω at room temperature (300 K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220–380 K), the
Φ
b
0
and A* values from the ordinate intercept and the slope of the modified Richardson curve of
ln
I
0
/
T
2
-
q
2
σ
s
2
/
2
k
2
T
2
versus 1/
T
plot which has been found to be 0.97 eV and 114 A/cm
2
K
2
, respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal–organic layer-semiconductor diode as compared to the Au/n-Si metal–semiconductor (MS) diode.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-019-01382-1</doi><tpages>11</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2019-06, Vol.30 (11), p.10408-10418 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2213652672 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science College campuses Engineering Glass substrates Gold Interlayers Light emitting diodes Materials Science Normal distribution Optical and Electronic Materials Optical properties Organic compounds Semiconductor diodes Silicon substrates Spin coating Structural analysis Thin films |
| title | The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode |
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