Thermoresistive Semiconductor SiC/Si Composite Material

Thermoresistive Semiconductor SiC/Si Composite Material

A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K ab...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-02, Vol.53 (2), p.220-223
Hauptverfasser: Brantov, S. K., Yakimov, E. B.
Format: Artikel
Sprache:eng
Schlagworte:
Carbides
Composite materials
Composite Semiconductors
Crystallites
Foils
Ionizing radiation
Magnetic Materials
Magnetism
Microcrystalline
Nanocrystalline
Physics
Physics and Astronomy
Porous
Semiconductors (Materials)
Silicon
Silicon carbide
Technology
Thermistors
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Beschreibung
Zusammenfassung:A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619020052