Enhanced Photoresponsivity of Multilayer MoS2 Phototransistor Using Localized Au Schottky Junction Formed by Spherical‐Lens Photolithography

The photoresponsivity of a MoS2 phototransistor is limited owing to its low light absorption. Many studies aiming to improve the photoresponsivity have enhanced the light absorption in MoS2 by optical resonance or by integrating an absorbing layer. However, the light‐absorbing overlayer changes the...

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Veröffentlicht in:	Advanced materials interfaces 2019-04, Vol.6 (8), p.n/a
Hauptverfasser:	Lee, Sanghyun, Park, Jinwoo, Yun, Yeojun, Lee, Jaejin, Heo, Junseok
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Disks Electric fields Electrical junctions Electrical properties Electromagnetic absorption Molybdenum disulfide MoS2 Multilayers Optical resonance Optoelectronics photogain Photolithography photoresponsivity phototransistor Schottky junction
Online-Zugang:	Volltext
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