SnTe x Se1−x Alloy: An Effective Alternative to SnSe Nano-crystalline Thin Films for Optoelectronic Applications
As prepared by fusion, SnTexSe1−x (x = 0.68) alloy is found to possess mixed phases of hexagonal Te and orthorhombic SnSe. The deposited films of this alloy demonstrate incongruent evaporation of the constituents. Reductions in c-parameter and strain along the z-axis in lattices of SnSe and Te const...
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| Veröffentlicht in: | Journal of electronic materials 2019-07, Vol.48 (7), p.4335-4341 |
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| creator | Devi, Anjali Banotra, Arun Kumar, Shiv Kapoor, Ashok K Padha, Naresh |
| description | As prepared by fusion, SnTexSe1−x (x = 0.68) alloy is found to possess mixed phases of hexagonal Te and orthorhombic SnSe. The deposited films of this alloy demonstrate incongruent evaporation of the constituents. Reductions in c-parameter and strain along the z-axis in lattices of SnSe and Te constituents have been observed in these films at 353 K. These deviations in the structure of SnTexSe1−x films make it superior to SnSe for various optoelectronic applications. The absorption coefficient of SnTexSe1−x films is higher than SnSe, and its bandgap attains a value of 0.93 eV. Further, resistivity value of SnTexSe1−x (∼ 6.12 × 10−2 Ω cm) is lower and carrier concentration (∼ 1.31 × 1019 cm−3) is higher than SnSe, whereas its mobility value (∼ 25.8 cm2/V s) matches SnSe and similar materials. The surface quality of SnTexSe1−x improves and number of crystallites increases. The interface of p-SnTexSe1−x with Ag metal forms a Schottky diode. The current–voltage (I–V) behaviour of Ag/p-SnTexSe1−x Schottky diodes is analysed and diode parameters are determined by using thermionic emission and diffusion (TED) current transport mechanism. |
| doi_str_mv | 10.1007/s11664-019-07202-w |
| format | Article |
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The deposited films of this alloy demonstrate incongruent evaporation of the constituents. Reductions in c-parameter and strain along the z-axis in lattices of SnSe and Te constituents have been observed in these films at 353 K. These deviations in the structure of SnTexSe1−x films make it superior to SnSe for various optoelectronic applications. The absorption coefficient of SnTexSe1−x films is higher than SnSe, and its bandgap attains a value of 0.93 eV. Further, resistivity value of SnTexSe1−x (∼ 6.12 × 10−2 Ω cm) is lower and carrier concentration (∼ 1.31 × 1019 cm−3) is higher than SnSe, whereas its mobility value (∼ 25.8 cm2/V s) matches SnSe and similar materials. The surface quality of SnTexSe1−x improves and number of crystallites increases. The interface of p-SnTexSe1−x with Ag metal forms a Schottky diode. The current–voltage (I–V) behaviour of Ag/p-SnTexSe1−x Schottky diodes is analysed and diode parameters are determined by using thermionic emission and diffusion (TED) current transport mechanism.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-019-07202-w</identifier><language>eng</language><publisher>Warrendale: Springer Nature B.V</publisher><subject>Absorptivity ; Carrier density ; Crystallites ; Diodes ; Emission analysis ; Lattices ; Metallurgical constituents ; Nanoalloys ; Optoelectronics ; Parameters ; Schottky diodes ; Silver ; Surface properties ; Tellurium ; Thermionic emission ; Thin films</subject><ispartof>Journal of electronic materials, 2019-07, Vol.48 (7), p.4335-4341</ispartof><rights>Journal of Electronic Materials is a copyright of Springer, (2019). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Devi, Anjali</creatorcontrib><creatorcontrib>Banotra, Arun</creatorcontrib><creatorcontrib>Kumar, Shiv</creatorcontrib><creatorcontrib>Kapoor, Ashok K</creatorcontrib><creatorcontrib>Padha, Naresh</creatorcontrib><title>SnTe x Se1−x Alloy: An Effective Alternative to SnSe Nano-crystalline Thin Films for Optoelectronic Applications</title><title>Journal of electronic materials</title><description>As prepared by fusion, SnTexSe1−x (x = 0.68) alloy is found to possess mixed phases of hexagonal Te and orthorhombic SnSe. The deposited films of this alloy demonstrate incongruent evaporation of the constituents. Reductions in c-parameter and strain along the z-axis in lattices of SnSe and Te constituents have been observed in these films at 353 K. These deviations in the structure of SnTexSe1−x films make it superior to SnSe for various optoelectronic applications. The absorption coefficient of SnTexSe1−x films is higher than SnSe, and its bandgap attains a value of 0.93 eV. Further, resistivity value of SnTexSe1−x (∼ 6.12 × 10−2 Ω cm) is lower and carrier concentration (∼ 1.31 × 1019 cm−3) is higher than SnSe, whereas its mobility value (∼ 25.8 cm2/V s) matches SnSe and similar materials. The surface quality of SnTexSe1−x improves and number of crystallites increases. The interface of p-SnTexSe1−x with Ag metal forms a Schottky diode. The current–voltage (I–V) behaviour of Ag/p-SnTexSe1−x Schottky diodes is analysed and diode parameters are determined by using thermionic emission and diffusion (TED) current transport mechanism.</description><subject>Absorptivity</subject><subject>Carrier density</subject><subject>Crystallites</subject><subject>Diodes</subject><subject>Emission analysis</subject><subject>Lattices</subject><subject>Metallurgical constituents</subject><subject>Nanoalloys</subject><subject>Optoelectronics</subject><subject>Parameters</subject><subject>Schottky diodes</subject><subject>Silver</subject><subject>Surface properties</subject><subject>Tellurium</subject><subject>Thermionic emission</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNqNj0FOwzAURC0EEoFyAVZfYm3wt5O0sItQq65gkSy6q6LoR7gy_sF2ob0Ba47ISbAQB2A1o9HojUaIa1S3qNT8LiLWdSkV3ks110rLjxNRYFUaiYt6cyoKZWqUlTbVubiIcacUVrjAQoTWdwQHaAm_P78O0DjHxwdoPCzHkYZk3ylniYLvf31iaH1L8NR7lkM4xtQ7Zz1B92I9rKx7jTBygOcpMbkMCOztAM00OTtkBPs4E2dj7yJd_emluFktu8e1nAK_7Smm7Y73ec_FrdaoTZkfafO_1g9cylJ8</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Devi, Anjali</creator><creator>Banotra, Arun</creator><creator>Kumar, Shiv</creator><creator>Kapoor, Ashok K</creator><creator>Padha, Naresh</creator><general>Springer Nature B.V</general><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20190701</creationdate><title>SnTe x Se1−x Alloy: An Effective Alternative to SnSe Nano-crystalline Thin Films for Optoelectronic Applications</title><author>Devi, Anjali ; 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The deposited films of this alloy demonstrate incongruent evaporation of the constituents. Reductions in c-parameter and strain along the z-axis in lattices of SnSe and Te constituents have been observed in these films at 353 K. These deviations in the structure of SnTexSe1−x films make it superior to SnSe for various optoelectronic applications. The absorption coefficient of SnTexSe1−x films is higher than SnSe, and its bandgap attains a value of 0.93 eV. Further, resistivity value of SnTexSe1−x (∼ 6.12 × 10−2 Ω cm) is lower and carrier concentration (∼ 1.31 × 1019 cm−3) is higher than SnSe, whereas its mobility value (∼ 25.8 cm2/V s) matches SnSe and similar materials. The surface quality of SnTexSe1−x improves and number of crystallites increases. The interface of p-SnTexSe1−x with Ag metal forms a Schottky diode. The current–voltage (I–V) behaviour of Ag/p-SnTexSe1−x Schottky diodes is analysed and diode parameters are determined by using thermionic emission and diffusion (TED) current transport mechanism.</abstract><cop>Warrendale</cop><pub>Springer Nature B.V</pub><doi>10.1007/s11664-019-07202-w</doi></addata></record> |
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| subjects | Absorptivity Carrier density Crystallites Diodes Emission analysis Lattices Metallurgical constituents Nanoalloys Optoelectronics Parameters Schottky diodes Silver Surface properties Tellurium Thermionic emission Thin films |
| title | SnTe x Se1−x Alloy: An Effective Alternative to SnSe Nano-crystalline Thin Films for Optoelectronic Applications |
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