Understanding the Impact of Bismuth Heterovalent Doping on the Structural and Photophysical Properties of CH3NH3PbBr3 Halide Perovskite Crystals with Near‐IR Photoluminescence

A comprehensive study unveiling the impact of heterovalent doping with Bi3+ on the structural, semiconductive, and photoluminescent properties of a single crystal of lead halide perovskites (CH3NH3PbBr3) is presented. As indicated by single‐crystal XRD, a perfect cubic structure in Bi3+‐doped CH3NH3...

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Veröffentlicht in:Chemistry : a European journal 2019-04, Vol.25 (21), p.5480-5488
Hauptverfasser: Meng, Rui, Wu, Guangbao, Zhou, Jiyu, Zhou, Huiqiong, Fang, Honghua, Loi, Maria A., Zhang, Yuan
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Sprache:eng
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Zusammenfassung:A comprehensive study unveiling the impact of heterovalent doping with Bi3+ on the structural, semiconductive, and photoluminescent properties of a single crystal of lead halide perovskites (CH3NH3PbBr3) is presented. As indicated by single‐crystal XRD, a perfect cubic structure in Bi3+‐doped CH3NH3PbBr3 crystals is maintained in association with a slight lattice contraction. Time‐resolved and power‐dependent photoluminescence (PL) spectroscopy illustrates a progressively quenched PL of visible emission, alongside the appearance of a new PL signal in the near‐infrared (NIR) regime, which is likely to be due to energy transfer to the Bi sites. These optical characteristics indicate the role of Bi3+ dopants as nonradiative recombination centers, which explains the observed transition from bimolecular recombination in pristine CH3NH3PbBr3 to a dominant trap‐assisted monomolecular recombination with Bi3+ doping. Electrically, it is found that the mobility in pristine perovskite crystals can be boosted with a low Bi3+ concentration, which may be related to a trap‐filling mechanism. Aided by temperature (T)‐dependent measurements, two temperature regimes are observed in association with different activation energies (Ea) for electrical conductivity. The reduction of Ea at lower T may be ascribed to suppression of ionic conduction induced by doping. The modified electrical properties and NIR emission with the control of Bi3+ concentration shed light on the opportunity to apply heterovalent doping of perovskite single crystals for NIR optoelectronic applications. Infiltrating single crystals: Heterovalent doping with Bi3+ (see figure) leads to modulation of the charge carrier mobility and thermal activation energy of electrical conductivity in CH3NH3PbBr3 single crystals. Upon doping, a new photoluminescent emission appears in the near‐infrared region of the spectrum.
ISSN:0947-6539
1521-3765
DOI:10.1002/chem.201805370