Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing

•AlN films were fabricated on SiC substrates by sputtering deposition.•High temperature annealing improved crystalline quality of the AlN films.•Strain relaxation in AlN films occurred during high temperature annealing.•Homoepitaxially grown AlN films on the template exhibited an atomically flat sur...

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Veröffentlicht in:	Journal of crystal growth 2019-03, Vol.510, p.13-17
Hauptverfasser:	Uesugi, Kenjiro, Hayashi, Yusuke, Shojiki, Kanako, Xiao, Shiyu, Nagamatsu, Kentaro, Yoshida, Harumasa, Miyake, Hideto
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Atomic force microscopy A1. Stresses A1. X-ray diffraction Aluminum nitride Annealing B1. Nitrides B2. Semiconducting III-V materials Deposition Diffraction Epitaxial growth High temperature Metalorganic chemical vapor deposition Molecular beam epitaxy Morphology Sputtering Substrates Tensile strain Ultraviolet radiation
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