Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2019-05, Vol.125 (5), Article 295 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Katamune, Yūki Takeichi, Satoshi Ohtani, Ryota Koizumi, Satoshi Ikenaga, Eiji Kamitani, Kazutaka Sugiyama, Takeharu Yoshitake, Tsuyoshi |
| description | Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10
−7
to 10
−1
Ω
−1
cm
−1
with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity. |
| doi_str_mv | 10.1007/s00339-019-2607-8 |
| format | Article |
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−7
to 10
−1
Ω
−1
cm
−1
with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-019-2607-8</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Arc deposition ; Boron ; Carrier transport ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Diamonds ; Electrical properties ; Electrical resistivity ; Hopping conduction ; Hydrogenation ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Photoelectrons ; Physics ; Physics and Astronomy ; Plasma deposition ; Processes ; Spectrum analysis ; Surfaces and Interfaces ; Temperature dependence ; Thin Films ; Valence band</subject><ispartof>Applied physics. A, Materials science & processing, 2019-05, Vol.125 (5), Article 295</ispartof><rights>Springer-Verlag GmbH Germany, part of Springer Nature 2019</rights><rights>Springer-Verlag GmbH Germany, part of Springer Nature 2019.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c382t-d87e1681fdc9b3fc783e53682f7a0a56c43fbd37a71d20b81c2e249733f11c683</citedby><cites>FETCH-LOGICAL-c382t-d87e1681fdc9b3fc783e53682f7a0a56c43fbd37a71d20b81c2e249733f11c683</cites><orcidid>0000-0001-7527-3984</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-019-2607-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-019-2607-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Katamune, Yūki</creatorcontrib><creatorcontrib>Takeichi, Satoshi</creatorcontrib><creatorcontrib>Ohtani, Ryota</creatorcontrib><creatorcontrib>Koizumi, Satoshi</creatorcontrib><creatorcontrib>Ikenaga, Eiji</creatorcontrib><creatorcontrib>Kamitani, Kazutaka</creatorcontrib><creatorcontrib>Sugiyama, Takeharu</creatorcontrib><creatorcontrib>Yoshitake, Tsuyoshi</creatorcontrib><title>Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10
−7
to 10
−1
Ω
−1
cm
−1
with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.</description><subject>Applied physics</subject><subject>Arc deposition</subject><subject>Boron</subject><subject>Carrier transport</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Diamonds</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Hopping conduction</subject><subject>Hydrogenation</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Plasma deposition</subject><subject>Processes</subject><subject>Spectrum analysis</subject><subject>Surfaces and Interfaces</subject><subject>Temperature dependence</subject><subject>Thin Films</subject><subject>Valence band</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAUhYMoOI7-AHcB19Ukt9PHUobxAQNudB3SPGYytEm9aYX593as4Mq7uXA451zuR8gtZ_ecsfIhMQZQZ4zXmShYmVVnZMFzEBkrgJ2TBavzSYS6uCRXKR3YNLkQC_K1aa0e0GvV0h5jb3HwNtHoaBMxhswHHbGPqAZr6NgOqIIKUeMxDaptfbDUeNXFYB72R4NxZ8OPc5Kw38cxUa2wiYHq2PUx-cFS59suXZMLp9pkb373knw8bd7XL9n27fl1_bjNNFRiyExVWl5U3BldN-B0WYFdQVEJVyqmVoXOwTUGSlVyI1hTcS2syOsSwHGuiwqW5G7unX77HG0a5CGOGKaTUggGAnJWw-Tis0tjTAmtkz36TuFRciZPeOWMV0545QmvPDWLOZMmb9hZ_Gv-P_QNnCqApg</recordid><startdate>20190501</startdate><enddate>20190501</enddate><creator>Katamune, Yūki</creator><creator>Takeichi, Satoshi</creator><creator>Ohtani, Ryota</creator><creator>Koizumi, Satoshi</creator><creator>Ikenaga, Eiji</creator><creator>Kamitani, Kazutaka</creator><creator>Sugiyama, Takeharu</creator><creator>Yoshitake, Tsuyoshi</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-7527-3984</orcidid></search><sort><creationdate>20190501</creationdate><title>Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films</title><author>Katamune, Yūki ; Takeichi, Satoshi ; Ohtani, Ryota ; Koizumi, Satoshi ; Ikenaga, Eiji ; Kamitani, Kazutaka ; Sugiyama, Takeharu ; Yoshitake, Tsuyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c382t-d87e1681fdc9b3fc783e53682f7a0a56c43fbd37a71d20b81c2e249733f11c683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Arc deposition</topic><topic>Boron</topic><topic>Carrier transport</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Diamonds</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Hopping conduction</topic><topic>Hydrogenation</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Plasma deposition</topic><topic>Processes</topic><topic>Spectrum analysis</topic><topic>Surfaces and Interfaces</topic><topic>Temperature dependence</topic><topic>Thin Films</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Katamune, Yūki</creatorcontrib><creatorcontrib>Takeichi, Satoshi</creatorcontrib><creatorcontrib>Ohtani, Ryota</creatorcontrib><creatorcontrib>Koizumi, Satoshi</creatorcontrib><creatorcontrib>Ikenaga, Eiji</creatorcontrib><creatorcontrib>Kamitani, Kazutaka</creatorcontrib><creatorcontrib>Sugiyama, Takeharu</creatorcontrib><creatorcontrib>Yoshitake, Tsuyoshi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Katamune, Yūki</au><au>Takeichi, Satoshi</au><au>Ohtani, Ryota</au><au>Koizumi, Satoshi</au><au>Ikenaga, Eiji</au><au>Kamitani, Kazutaka</au><au>Sugiyama, Takeharu</au><au>Yoshitake, Tsuyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2019-05-01</date><risdate>2019</risdate><volume>125</volume><issue>5</issue><artnum>295</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10
−7
to 10
−1
Ω
−1
cm
−1
with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-019-2607-8</doi><orcidid>https://orcid.org/0000-0001-7527-3984</orcidid></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Applied physics Arc deposition Boron Carrier transport Characterization and Evaluation of Materials Condensed Matter Physics Diamonds Electrical properties Electrical resistivity Hopping conduction Hydrogenation Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Photoelectrons Physics Physics and Astronomy Plasma deposition Processes Spectrum analysis Surfaces and Interfaces Temperature dependence Thin Films Valence band |
| title | Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films |
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