Characterization of n and p-type (SnO2)x(ZnO)1-x nanoparticles thin films
Electron beam evaporation technique was used to deposit (SnO2)x(ZnO)1-x thin films with different concentrations of SnO2 and ZnO. Optical transmittance (T) and reflectance (R) of the films were measured in the wavelength range 200–2500 nm. It was found that the optical properties of the films are st...
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| Veröffentlicht in: | European physical journal. Applied physics 2015-10, Vol.72 (1), p.10301 |
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| creator | Ali, Hazem Mahmoud Abdel Hakeem, Ahmed Mohamed |
| description | Electron beam evaporation technique was used to deposit (SnO2)x(ZnO)1-x thin films with different concentrations of SnO2 and ZnO. Optical transmittance (T) and reflectance (R) of the films were measured in the wavelength range 200–2500 nm. It was found that the optical properties of the films are strongly affected by the ratio of Sn content. The optical energy gaps of direct and indirect transition for the films were determined. Values of energy gap were in the range from 3.35 to 4 eV for direct transition, and from 2.53 to 3.43 eV for indirect transition. The electrical resistivity of the films was measured by means of two contact method. Values of electrical resistivity were in the range between 5.06 × 10-4 and 1.55 × 102 Ω cm depending on the ratio of Sn and Zn ratios. A transformation from n-type to p-type semiconductors was observed. |
| doi_str_mv | 10.1051/epjap/2015150188 |
| format | Article |
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Optical transmittance (T) and reflectance (R) of the films were measured in the wavelength range 200–2500 nm. It was found that the optical properties of the films are strongly affected by the ratio of Sn content. The optical energy gaps of direct and indirect transition for the films were determined. Values of energy gap were in the range from 3.35 to 4 eV for direct transition, and from 2.53 to 3.43 eV for indirect transition. The electrical resistivity of the films was measured by means of two contact method. Values of electrical resistivity were in the range between 5.06 × 10-4 and 1.55 × 102 Ω cm depending on the ratio of Sn and Zn ratios. A transformation from n-type to p-type semiconductors was observed.</description><identifier>ISSN: 1286-0042</identifier><identifier>EISSN: 1286-0050</identifier><identifier>DOI: 10.1051/epjap/2015150188</identifier><language>eng</language><publisher>Les Ulis: EDP Sciences</publisher><subject>Electric contacts ; Electrical resistivity ; Electron beams ; Energy gap ; N-type semiconductors ; Nanoparticles ; Optical properties ; P-type semiconductors ; Reflectance ; Thin films ; Tin ; Tin dioxide ; Zinc oxide</subject><ispartof>European physical journal. Applied physics, 2015-10, Vol.72 (1), p.10301</ispartof><rights>2015. 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Applied physics</title><description>Electron beam evaporation technique was used to deposit (SnO2)x(ZnO)1-x thin films with different concentrations of SnO2 and ZnO. Optical transmittance (T) and reflectance (R) of the films were measured in the wavelength range 200–2500 nm. It was found that the optical properties of the films are strongly affected by the ratio of Sn content. The optical energy gaps of direct and indirect transition for the films were determined. Values of energy gap were in the range from 3.35 to 4 eV for direct transition, and from 2.53 to 3.43 eV for indirect transition. The electrical resistivity of the films was measured by means of two contact method. Values of electrical resistivity were in the range between 5.06 × 10-4 and 1.55 × 102 Ω cm depending on the ratio of Sn and Zn ratios. A transformation from n-type to p-type semiconductors was observed.</description><subject>Electric contacts</subject><subject>Electrical resistivity</subject><subject>Electron beams</subject><subject>Energy gap</subject><subject>N-type semiconductors</subject><subject>Nanoparticles</subject><subject>Optical properties</subject><subject>P-type semiconductors</subject><subject>Reflectance</subject><subject>Thin films</subject><subject>Tin</subject><subject>Tin dioxide</subject><subject>Zinc oxide</subject><issn>1286-0042</issn><issn>1286-0050</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFkEtPAjEUhSdGExHdu2ziBhYj9_Yxj6USHyQoCx8YNk2ndMIgdMa2JOCvdxSjq3sW3zk3-aLoHOESQeDANEvVDCigQAGYZQdRB2mWxAACDv8yp8fRifdLAMAkE51oNFwop3QwrvpUoaotqUtiibJz0sRh1xjSe7IT2t_2ZnbSx3hLrLJ1o1yo9Mp4EhaVJWW1WvvT6KhUK2_Ofm83erm9eR7ex-PJ3Wh4NY41pTzElOeC8QQ0NXxOdcoLjsIYlpc5cKZyAfMiYYXJhcC0THmpWY46KRAFhaIFu9HFfrdx9cfG-CCX9cbZ9qWkFCjjwDBrKdhT2tXeO1PKxlVr5XYSQX4Lkz_C5L-wthLvK5UPZvvHK_cuk5SlQmYwldfs9eHxbQZyyr4AlV5rzQ</recordid><startdate>201510</startdate><enddate>201510</enddate><creator>Ali, Hazem Mahmoud</creator><creator>Abdel Hakeem, Ahmed Mohamed</creator><general>EDP Sciences</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201510</creationdate><title>Characterization of n and p-type (SnO2)x(ZnO)1-x nanoparticles thin films</title><author>Ali, Hazem Mahmoud ; Abdel Hakeem, Ahmed Mohamed</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c224t-24953460c2e4d2c74b415ee39f9043a950db63be95517f74fc391c6b11520bee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Electric contacts</topic><topic>Electrical resistivity</topic><topic>Electron beams</topic><topic>Energy gap</topic><topic>N-type semiconductors</topic><topic>Nanoparticles</topic><topic>Optical properties</topic><topic>P-type semiconductors</topic><topic>Reflectance</topic><topic>Thin films</topic><topic>Tin</topic><topic>Tin dioxide</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ali, Hazem Mahmoud</creatorcontrib><creatorcontrib>Abdel Hakeem, Ahmed Mohamed</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>European physical journal. Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ali, Hazem Mahmoud</au><au>Abdel Hakeem, Ahmed Mohamed</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of n and p-type (SnO2)x(ZnO)1-x nanoparticles thin films</atitle><jtitle>European physical journal. Applied physics</jtitle><date>2015-10</date><risdate>2015</risdate><volume>72</volume><issue>1</issue><spage>10301</spage><pages>10301-</pages><issn>1286-0042</issn><eissn>1286-0050</eissn><abstract>Electron beam evaporation technique was used to deposit (SnO2)x(ZnO)1-x thin films with different concentrations of SnO2 and ZnO. Optical transmittance (T) and reflectance (R) of the films were measured in the wavelength range 200–2500 nm. It was found that the optical properties of the films are strongly affected by the ratio of Sn content. The optical energy gaps of direct and indirect transition for the films were determined. Values of energy gap were in the range from 3.35 to 4 eV for direct transition, and from 2.53 to 3.43 eV for indirect transition. The electrical resistivity of the films was measured by means of two contact method. Values of electrical resistivity were in the range between 5.06 × 10-4 and 1.55 × 102 Ω cm depending on the ratio of Sn and Zn ratios. A transformation from n-type to p-type semiconductors was observed.</abstract><cop>Les Ulis</cop><pub>EDP Sciences</pub><doi>10.1051/epjap/2015150188</doi></addata></record> |
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| ispartof | European physical journal. Applied physics, 2015-10, Vol.72 (1), p.10301 |
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| language | eng |
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| source | Bacon EDP Sciences France Licence nationale-ISTEX-PS-Journals-PFISTEX; EDP Sciences Open Access Journals |
| subjects | Electric contacts Electrical resistivity Electron beams Energy gap N-type semiconductors Nanoparticles Optical properties P-type semiconductors Reflectance Thin films Tin Tin dioxide Zinc oxide |
| title | Characterization of n and p-type (SnO2)x(ZnO)1-x nanoparticles thin films |
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