Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators

We present experimental results of non-linear transport in HgTe-based 2D topological insulators, where the conductance is dominated by Dirac-like helical edge states when the Fermi level is pinned to the bulk insulating gap. We find that hot carrier's energy relaxation is faster close to the ch...

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Veröffentlicht in:	Microelectronic engineering 2019-02, Vol.206, p.55-59
Hauptverfasser:	Rahim, Abdur, Gusev, G.M., Kvon, Z.D., Olshanetsky, E.B., Mikhailov, N.N., Dvoretsky, S.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge distribution Current carriers Electric fields electron-phonon scattering energy relaxation mechanisms Incompressibility inelastic processes Insulation Low temperature resistance Non-linear transport Quantum dots Relaxation time Resistance Temperature dependence Thermalization (energy absorption) Time dependence Topological insulators Topology
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