A Novel MEMS Device for Scanning Profile Measurement with Three Cantilever Displacement Sensors
A novel Micro Electro Mechanical System (MEMS) measurement device for straightness measurement with a three point method has been proposed. This device integrates three cantilever displacement sensors with a narrow pitch on a silicon chip. The authors determine appropriates shape, dimensions of the...
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| Veröffentlicht in: | Applied mechanics and materials 2017-09, Vol.870, p.237-242 |
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| creator | Shimizu, Hiroki Baba, Akiyoshi Yanagihara, Shinya Akiyoshi, Takahiro Tamaru, Yuuma |
| description | A novel Micro Electro Mechanical System (MEMS) measurement device for straightness measurement with a three point method has been proposed. This device integrates three cantilever displacement sensors with a narrow pitch on a silicon chip. The authors determine appropriates shape, dimensions of the cantilever, and a fabrication process. According to simulation results, a triangular cantilever with altitude 12 mm long, base 4mm long, and 0.25 mm thickness was adopted to realize the target measuring range of 100 μm. Near the end of each cantilever, a square frustum probe 250 μm high which was fabricated by anisotropic wet etching was placed. Near the base of cantilevers, four piezo resistance gauges were formed; two are active gauges for measuring stress arise from a displacement at the probe and the others are dummy gauges for temperature compensation. Wiring and contact terminals were fabricated on the base substrate and the total size of the device is 20 mm × 32 mm. The fabrication process of this device was designed and result of a trial production was reported. |
| doi_str_mv | 10.4028/www.scientific.net/AMM.870.237 |
| format | Article |
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This device integrates three cantilever displacement sensors with a narrow pitch on a silicon chip. The authors determine appropriates shape, dimensions of the cantilever, and a fabrication process. According to simulation results, a triangular cantilever with altitude 12 mm long, base 4mm long, and 0.25 mm thickness was adopted to realize the target measuring range of 100 μm. Near the end of each cantilever, a square frustum probe 250 μm high which was fabricated by anisotropic wet etching was placed. Near the base of cantilevers, four piezo resistance gauges were formed; two are active gauges for measuring stress arise from a displacement at the probe and the others are dummy gauges for temperature compensation. Wiring and contact terminals were fabricated on the base substrate and the total size of the device is 20 mm × 32 mm. 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This device integrates three cantilever displacement sensors with a narrow pitch on a silicon chip. The authors determine appropriates shape, dimensions of the cantilever, and a fabrication process. According to simulation results, a triangular cantilever with altitude 12 mm long, base 4mm long, and 0.25 mm thickness was adopted to realize the target measuring range of 100 μm. Near the end of each cantilever, a square frustum probe 250 μm high which was fabricated by anisotropic wet etching was placed. Near the base of cantilevers, four piezo resistance gauges were formed; two are active gauges for measuring stress arise from a displacement at the probe and the others are dummy gauges for temperature compensation. Wiring and contact terminals were fabricated on the base substrate and the total size of the device is 20 mm × 32 mm. 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| subjects | Chemical vapor deposition Design Displacement Etching Gauges Ion implantation Mechanical systems Microelectromechanical systems Profile measurement Rangefinding Sensors Silicon wafers Strain gauges Substrates Temperature compensation Three point method Wiring |
| title | A Novel MEMS Device for Scanning Profile Measurement with Three Cantilever Displacement Sensors |
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