Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf0.5Zr0.5O2/ TiN/SiO2/Si and TiN/HfXAl1-XOY/Pt/SiO2/Si Test Structures Obtained on the National Technological Basis

The properties and applications of materials with non-volatile memory based on HfO2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf0.5Zr0.5O2/ TiN/ SiO2/ Si and TiN/ HfxAl1-xOy/ Pt/ S...

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Veröffentlicht in:	Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Defect and diffusion forum, 2018-09, Vol.386, p.172-177
1. Verfasser:	Orlov, Oleg M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ferroelectric materials Ferroelectricity Hafnium oxide Integrated circuits Silicon dioxide
Online-Zugang:	Volltext
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