Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf0.5Zr0.5O2/ TiN/SiO2/Si and TiN/HfXAl1-XOY/Pt/SiO2/Si Test Structures Obtained on the National Technological Basis
The properties and applications of materials with non-volatile memory based on HfO2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf0.5Zr0.5O2/ TiN/ SiO2/ Si and TiN/ HfxAl1-xOy/ Pt/ S...
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| Veröffentlicht in: | Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Defect and diffusion forum, 2018-09, Vol.386, p.172-177 |
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| container_title | Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum |
| container_volume | 386 |
| creator | Orlov, Oleg M. |
| description | The properties and applications of materials with non-volatile memory based on HfO2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf0.5Zr0.5O2/ TiN/ SiO2/ Si and TiN/ HfxAl1-xOy/ Pt/ SiO2/ Si for the non-volatile memory of FeRAM and ReRAM types obtained by the atomic-layer deposition was shown. In addition, the scalability of these elements and opportunity to create promising submicron integrated circuits for ferroelectric and resistive memory were demonstrated. |
| doi_str_mv | 10.4028/www.scientific.net/DDF.386.172 |
| format | Article |
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| ispartof | Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2018-09, Vol.386, p.172-177 |
| issn | 1012-0386 1662-9507 1662-9507 |
| language | eng |
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| source | Scientific.net Journals |
| subjects | Ferroelectric materials Ferroelectricity Hafnium oxide Integrated circuits Silicon dioxide |
| title | Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf0.5Zr0.5O2/ TiN/SiO2/Si and TiN/HfXAl1-XOY/Pt/SiO2/Si Test Structures Obtained on the National Technological Basis |
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