The emergence and prospects of deep-ultraviolet light-emitting diode technologies

By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industria...

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Veröffentlicht in:	Nature photonics 2019-04, Vol.13 (4), p.233-244
Hauptverfasser:	Kneissl, Michael, Seong, Tae-Yeon, Han, Jung, Amano, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	639/624 639/624/1020 Aluminum Aluminum gallium nitrides Applied and Technical Physics Carrier density Efficiency Gallium nitrides Injection Light emitting diodes Organic light emitting diodes Physics Physics and Astronomy Quantum Physics Review Article Spectral emittance Ultraviolet radiation Ultraviolet spectra
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