High-frequency V-doped ZnO/SiC surface acoustic wave devices with enhanced electromechanical coupling coefficient

The rapid development of large-volume and high-speed mobile communication systems has increased the demand for high-frequency and wide-band surface acoustic wave (SAW) devices. In this work, ZnO films and V-doped ZnO (V:ZnO) films with (0002) orientation were grown on SiC substrates using a magnetro...

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Veröffentlicht in:	Applied physics letters 2019-03, Vol.114 (11)
Hauptverfasser:	Fu, Sulei, Wang, Weibiao, Li, Qi, Lu, Zengtian, Chen, Zhenglin, Luo, Jingting, Shen, Junyao, Wang, Rui, Song, Cheng, Zeng, Fei, Pan, Feng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Band saws Bandwidths Coupling coefficients Figure of merit Insertion loss Magnetron sputtering Mobile communication systems Photovoltaic cells Q factors Resonant frequencies Substrates Surface acoustic wave devices Surface acoustic waves Zinc oxide
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