A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I – V , C – V , and G – V Measurements

We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current ( {J} - {V} ), capacitance ( {C} - {V} ), and conductance ( {G} - {V} ) measurements. The technique relies on the concept of sensitivity maps (SMs) that i...

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Veröffentlicht in:IEEE transactions on electron devices 2019-04, Vol.66 (4), p.1892-1898
Hauptverfasser: Padovani, Andrea, Kaczer, Ben, Pesic, Milan, Belmonte, Attilio, Popovici, Mihaela, Nyns, Laura, Linten, Dimitri, Afanas'ev, Valeri V., Shlyakhov, Ilya, Lee, Younggon, Park, Hokyung, Larcher, Luca
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Sprache:eng
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