Large-Signal Modeling of a Scalable High- AlGaN/GaN High Electron-Mobility Varactor

In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2019-03, Vol.67 (3), p.922-927
Hauptverfasser:	Amirpour, Raul, Schwantuschke, Dirk, Van Raay, Friedbert, Brueckner, Peter, Quay, Ruediger, Ambacher, Oliver
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Capacitance Dispersion Gallium nitride gallium nitride (GaN) Gallium nitrides HEMTs high electron-mobility varactor (HEMVAR) Integrated circuit modeling Logic gates modeling Q factors varactor Varactor diodes Varactors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!