Large-Signal Modeling of a Scalable High- AlGaN/GaN High Electron-Mobility Varactor
In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intr...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2019-03, Vol.67 (3), p.922-927 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 927 |
|---|---|
| container_issue | 3 |
| container_start_page | 922 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 67 |
| creator | Amirpour, Raul Schwantuschke, Dirk Van Raay, Friedbert Brueckner, Peter Quay, Ruediger Ambacher, Oliver |
| description | In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intrinsic core, and takes dispersion into account. The main extraction is done on an eight-finger device with a tuning ratio of 4.3 and a minimum quality factor {Q} above 30 for frequencies below 2 GHz. The model is verified for a large range of bias points and frequencies. Load-pull measurements provide evidence even at high RF input power up to 23 dBm. |
| doi_str_mv | 10.1109/TMTT.2018.2890472 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2188602528</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8613790</ieee_id><sourcerecordid>2188602528</sourcerecordid><originalsourceid>FETCH-LOGICAL-c908-4558edce0dac457b6f709780f46012bf3986510cf49cf611ba2ca3afd315a253</originalsourceid><addsrcrecordid>eNo9kFFLwzAUhYMoOKc_QHwJ-JztJm3a5HGMuQmbPrT4GtI0qR1xmWn3sH-_zg0fLpfDPefC-RB6pjChFOS03JTlhAEVEyYkpDm7QSPKeU5klsMtGsFwIjIVcI8eum47yJSDGKFirWNjSdE2O-3xJtTWt7sGB4c1Loz2uvIWr9rmm-CZX-qP6TB_Gi-8NX0MO7IJVevb_oi_dNSmD_ER3TntO_t03WNUvC3K-YqsP5fv89maGAmCpJwLWxsLtTYpz6vM5SBzAS7NgLLKJVJknIJxqTQuo7TSzOhEuzqhXDOejNHr5es-ht-D7Xq1DYc4tOgUo0JkwDgTg4teXCaGrovWqX1sf3Q8KgrqTE6dyakzOXUlN2ReLpnWWvvvFxlNcgnJCciCaB4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2188602528</pqid></control><display><type>article</type><title>Large-Signal Modeling of a Scalable High- AlGaN/GaN High Electron-Mobility Varactor</title><source>IEEE Electronic Library (IEL)</source><creator>Amirpour, Raul ; Schwantuschke, Dirk ; Van Raay, Friedbert ; Brueckner, Peter ; Quay, Ruediger ; Ambacher, Oliver</creator><creatorcontrib>Amirpour, Raul ; Schwantuschke, Dirk ; Van Raay, Friedbert ; Brueckner, Peter ; Quay, Ruediger ; Ambacher, Oliver</creatorcontrib><description>In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intrinsic core, and takes dispersion into account. The main extraction is done on an eight-finger device with a tuning ratio of 4.3 and a minimum quality factor <inline-formula> <tex-math notation="LaTeX">{Q} </tex-math></inline-formula> above 30 for frequencies below 2 GHz. The model is verified for a large range of bias points and frequencies. Load-pull measurements provide evidence even at high RF input power up to 23 dBm.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2018.2890472</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitrides ; Capacitance ; Dispersion ; Gallium nitride ; gallium nitride (GaN) ; Gallium nitrides ; HEMTs ; high electron-mobility varactor (HEMVAR) ; Integrated circuit modeling ; Logic gates ; modeling ; Q factors ; varactor ; Varactor diodes ; Varactors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2019-03, Vol.67 (3), p.922-927</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c908-4558edce0dac457b6f709780f46012bf3986510cf49cf611ba2ca3afd315a253</cites><orcidid>0000-0002-3003-0134 ; 0000-0001-9069-3127</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8613790$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8613790$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Amirpour, Raul</creatorcontrib><creatorcontrib>Schwantuschke, Dirk</creatorcontrib><creatorcontrib>Van Raay, Friedbert</creatorcontrib><creatorcontrib>Brueckner, Peter</creatorcontrib><creatorcontrib>Quay, Ruediger</creatorcontrib><creatorcontrib>Ambacher, Oliver</creatorcontrib><title>Large-Signal Modeling of a Scalable High- AlGaN/GaN High Electron-Mobility Varactor</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intrinsic core, and takes dispersion into account. The main extraction is done on an eight-finger device with a tuning ratio of 4.3 and a minimum quality factor <inline-formula> <tex-math notation="LaTeX">{Q} </tex-math></inline-formula> above 30 for frequencies below 2 GHz. The model is verified for a large range of bias points and frequencies. Load-pull measurements provide evidence even at high RF input power up to 23 dBm.</description><subject>Aluminum gallium nitrides</subject><subject>Capacitance</subject><subject>Dispersion</subject><subject>Gallium nitride</subject><subject>gallium nitride (GaN)</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>high electron-mobility varactor (HEMVAR)</subject><subject>Integrated circuit modeling</subject><subject>Logic gates</subject><subject>modeling</subject><subject>Q factors</subject><subject>varactor</subject><subject>Varactor diodes</subject><subject>Varactors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAUhYMoOKc_QHwJ-JztJm3a5HGMuQmbPrT4GtI0qR1xmWn3sH-_zg0fLpfDPefC-RB6pjChFOS03JTlhAEVEyYkpDm7QSPKeU5klsMtGsFwIjIVcI8eum47yJSDGKFirWNjSdE2O-3xJtTWt7sGB4c1Loz2uvIWr9rmm-CZX-qP6TB_Gi-8NX0MO7IJVevb_oi_dNSmD_ER3TntO_t03WNUvC3K-YqsP5fv89maGAmCpJwLWxsLtTYpz6vM5SBzAS7NgLLKJVJknIJxqTQuo7TSzOhEuzqhXDOejNHr5es-ht-D7Xq1DYc4tOgUo0JkwDgTg4teXCaGrovWqX1sf3Q8KgrqTE6dyakzOXUlN2ReLpnWWvvvFxlNcgnJCciCaB4</recordid><startdate>201903</startdate><enddate>201903</enddate><creator>Amirpour, Raul</creator><creator>Schwantuschke, Dirk</creator><creator>Van Raay, Friedbert</creator><creator>Brueckner, Peter</creator><creator>Quay, Ruediger</creator><creator>Ambacher, Oliver</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3003-0134</orcidid><orcidid>https://orcid.org/0000-0001-9069-3127</orcidid></search><sort><creationdate>201903</creationdate><title>Large-Signal Modeling of a Scalable High- AlGaN/GaN High Electron-Mobility Varactor</title><author>Amirpour, Raul ; Schwantuschke, Dirk ; Van Raay, Friedbert ; Brueckner, Peter ; Quay, Ruediger ; Ambacher, Oliver</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c908-4558edce0dac457b6f709780f46012bf3986510cf49cf611ba2ca3afd315a253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Aluminum gallium nitrides</topic><topic>Capacitance</topic><topic>Dispersion</topic><topic>Gallium nitride</topic><topic>gallium nitride (GaN)</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>high electron-mobility varactor (HEMVAR)</topic><topic>Integrated circuit modeling</topic><topic>Logic gates</topic><topic>modeling</topic><topic>Q factors</topic><topic>varactor</topic><topic>Varactor diodes</topic><topic>Varactors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Amirpour, Raul</creatorcontrib><creatorcontrib>Schwantuschke, Dirk</creatorcontrib><creatorcontrib>Van Raay, Friedbert</creatorcontrib><creatorcontrib>Brueckner, Peter</creatorcontrib><creatorcontrib>Quay, Ruediger</creatorcontrib><creatorcontrib>Ambacher, Oliver</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Amirpour, Raul</au><au>Schwantuschke, Dirk</au><au>Van Raay, Friedbert</au><au>Brueckner, Peter</au><au>Quay, Ruediger</au><au>Ambacher, Oliver</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Large-Signal Modeling of a Scalable High- AlGaN/GaN High Electron-Mobility Varactor</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2019-03</date><risdate>2019</risdate><volume>67</volume><issue>3</issue><spage>922</spage><epage>927</epage><pages>922-927</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intrinsic core, and takes dispersion into account. The main extraction is done on an eight-finger device with a tuning ratio of 4.3 and a minimum quality factor <inline-formula> <tex-math notation="LaTeX">{Q} </tex-math></inline-formula> above 30 for frequencies below 2 GHz. The model is verified for a large range of bias points and frequencies. Load-pull measurements provide evidence even at high RF input power up to 23 dBm.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2018.2890472</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3003-0134</orcidid><orcidid>https://orcid.org/0000-0001-9069-3127</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 2019-03, Vol.67 (3), p.922-927 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_proquest_journals_2188602528 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium nitrides Capacitance Dispersion Gallium nitride gallium nitride (GaN) Gallium nitrides HEMTs high electron-mobility varactor (HEMVAR) Integrated circuit modeling Logic gates modeling Q factors varactor Varactor diodes Varactors |
| title | Large-Signal Modeling of a Scalable High- AlGaN/GaN High Electron-Mobility Varactor |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T10%3A56%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Large-Signal%20Modeling%20of%20a%20Scalable%20High-%20AlGaN/GaN%20High%20Electron-Mobility%20Varactor&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Amirpour,%20Raul&rft.date=2019-03&rft.volume=67&rft.issue=3&rft.spage=922&rft.epage=927&rft.pages=922-927&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2018.2890472&rft_dat=%3Cproquest_RIE%3E2188602528%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2188602528&rft_id=info:pmid/&rft_ieee_id=8613790&rfr_iscdi=true |