Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition

Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p -type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin film...

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Veröffentlicht in:	Journal of electronic materials 2019-06, Vol.48 (6), p.3468-3478
Hauptverfasser:	Paneerselvam, Emmanuel, Lakshmi Narayanan, Vinoth Kumar, Vasa, Nilesh J., Higashihata, Mitsuhiro, Nakamura, Daisuke, Ikenoue, Hiroshi, Ramachandra Rao, M. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Characterization and Evaluation of Materials Chemistry and Materials Science Computer simulation Crystallization Doping Electronics and Microelectronics Fourier transforms Hall effect Infrared analysis Instrumentation Lasers Magnesium oxide Materials Science Numerical analysis Optical and Electronic Materials Photoelectrons Pulsed laser deposition Pulsed lasers Raman spectra Silicon carbide Solid State Physics Spectrum analysis Substrates Superconductors (materials) Thin films X-ray diffraction
Online-Zugang:	Volltext
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