Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy

•MBE was used to grow GaSb buffer and dot nucleation layers on Si(1 0 0).•Epitaxially grown MQW structure showed high quality.•Resulting MQWs were near designed size (8 nm) with very narrow PL peaks.•Properties of GaSb buffer and MQW structure were related to the growth temperature.•GaSb buffer and...

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