Crosslinking in halogen containing novolac electron beam negative resists

Halogenophenol novolac (HPN)‐based negative resists exhibit excellent sensitivity and pattern resolution properties. The HPNs act as synergists for crosslinking with other irradiation labile compounds such as naphthoquinone diazide and bisazide vs. hydrogen halide (HX) elimination reaction, resultin...

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Veröffentlicht in:Polymer engineering and science 1995-01, Vol.35 (2), p.180-183
Hauptverfasser: Lampe, I. V., Reinhardt, M.
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Reinhardt, M.
description Halogenophenol novolac (HPN)‐based negative resists exhibit excellent sensitivity and pattern resolution properties. The HPNs act as synergists for crosslinking with other irradiation labile compounds such as naphthoquinone diazide and bisazide vs. hydrogen halide (HX) elimination reaction, resulting in additional crosslinking, probably by aryl radical recombination and/or addition. We describe a new resist formulation based on HPN binder and melamine crosslinker (Cymel 303). In this case the irradiation induced HX elimination additionally catalyzes the melamine crosslinking.
doi_str_mv 10.1002/pen.760350210
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fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_218576801</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A16660118</galeid><sourcerecordid>A16660118</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3580-4bb183f17662d159162280f571488a63d48ae2f5579d6b829fb5d1555af847f23</originalsourceid><addsrcrecordid>eNp9kc1rGzEQxUVpoK7TY-9L6aGHbqqPlVZ7DCZ1DMEN_YRchFYebZWsJVdap8l_Hy02pgUTdBAMv5l5bx5Cbwk-IxjTTxvwZ7XAjGNK8As0IbySJRWseokmGDNaMinlK_Q6pVucecabCVrMYkipd_7O-a5wvvit-9CBL0zwg3Z-rPpwH3ptCujBDDH4ogW9Ljx0enD3UERILg3pFJ1Y3Sd4s_-n6Mfni--zy_Lqy3wxO78qDeMSl1XbEsksqYWgK8IbIiiV2PKaVFJqwVaV1EAt53WzEq2kjW155jjXVla1pWyK3u3mbmL4s4U0qNuwjT6vVJRIXguJSYY-7qBO96Cct2GI2mRfELM_D9bl8jkRQmCS5UxReQTPbwVrZ47xH_7jx2PBw9DpbUpq8e3rsdFmPHQEqzbRrXV8VASrMTaVY1OH2DL_fm9PJ6N7G7U3Lh2aGGuqSowG6x32Nyt7fH6mur5Y_rtgLyiHBg-HTh3vlKhZzdWv5VzNZzfLGyyl-smeAO-utGc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>218576801</pqid></control><display><type>article</type><title>Crosslinking in halogen containing novolac electron beam negative resists</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Lampe, I. V. ; Reinhardt, M.</creator><creatorcontrib>Lampe, I. V. ; Reinhardt, M.</creatorcontrib><description>Halogenophenol novolac (HPN)‐based negative resists exhibit excellent sensitivity and pattern resolution properties. The HPNs act as synergists for crosslinking with other irradiation labile compounds such as naphthoquinone diazide and bisazide vs. hydrogen halide (HX) elimination reaction, resulting in additional crosslinking, probably by aryl radical recombination and/or addition. We describe a new resist formulation based on HPN binder and melamine crosslinker (Cymel 303). In this case the irradiation induced HX elimination additionally catalyzes the melamine crosslinking.</description><identifier>ISSN: 0032-3888</identifier><identifier>EISSN: 1548-2634</identifier><identifier>DOI: 10.1002/pen.760350210</identifier><identifier>CODEN: PYESAZ</identifier><language>eng</language><publisher>Brookfield: Society of Plastics Engineers</publisher><subject>Applied sciences ; Chemical properties ; Crosslinked polymers ; Exact sciences and technology ; Materials ; Melamine ; Photoresists ; Polymer industry, paints, wood ; Production processes ; Properties and testing ; Technology of polymers</subject><ispartof>Polymer engineering and science, 1995-01, Vol.35 (2), p.180-183</ispartof><rights>Copyright © 1995 Society of Plastics Engineers</rights><rights>1995 INIST-CNRS</rights><rights>COPYRIGHT 1995 Society of Plastics Engineers, Inc.</rights><rights>Copyright Society of Plastics Engineers January 1995</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c3580-4bb183f17662d159162280f571488a63d48ae2f5579d6b829fb5d1555af847f23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpen.760350210$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpen.760350210$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,778,782,1414,4012,27906,27907,27908,45557,45558</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3394461$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lampe, I. V.</creatorcontrib><creatorcontrib>Reinhardt, M.</creatorcontrib><title>Crosslinking in halogen containing novolac electron beam negative resists</title><title>Polymer engineering and science</title><addtitle>Polym Eng Sci</addtitle><description>Halogenophenol novolac (HPN)‐based negative resists exhibit excellent sensitivity and pattern resolution properties. The HPNs act as synergists for crosslinking with other irradiation labile compounds such as naphthoquinone diazide and bisazide vs. hydrogen halide (HX) elimination reaction, resulting in additional crosslinking, probably by aryl radical recombination and/or addition. We describe a new resist formulation based on HPN binder and melamine crosslinker (Cymel 303). In this case the irradiation induced HX elimination additionally catalyzes the melamine crosslinking.</description><subject>Applied sciences</subject><subject>Chemical properties</subject><subject>Crosslinked polymers</subject><subject>Exact sciences and technology</subject><subject>Materials</subject><subject>Melamine</subject><subject>Photoresists</subject><subject>Polymer industry, paints, wood</subject><subject>Production processes</subject><subject>Properties and testing</subject><subject>Technology of polymers</subject><issn>0032-3888</issn><issn>1548-2634</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNp9kc1rGzEQxUVpoK7TY-9L6aGHbqqPlVZ7DCZ1DMEN_YRchFYebZWsJVdap8l_Hy02pgUTdBAMv5l5bx5Cbwk-IxjTTxvwZ7XAjGNK8As0IbySJRWseokmGDNaMinlK_Q6pVucecabCVrMYkipd_7O-a5wvvit-9CBL0zwg3Z-rPpwH3ptCujBDDH4ogW9Ljx0enD3UERILg3pFJ1Y3Sd4s_-n6Mfni--zy_Lqy3wxO78qDeMSl1XbEsksqYWgK8IbIiiV2PKaVFJqwVaV1EAt53WzEq2kjW155jjXVla1pWyK3u3mbmL4s4U0qNuwjT6vVJRIXguJSYY-7qBO96Cct2GI2mRfELM_D9bl8jkRQmCS5UxReQTPbwVrZ47xH_7jx2PBw9DpbUpq8e3rsdFmPHQEqzbRrXV8VASrMTaVY1OH2DL_fm9PJ6N7G7U3Lh2aGGuqSowG6x32Nyt7fH6mur5Y_rtgLyiHBg-HTh3vlKhZzdWv5VzNZzfLGyyl-smeAO-utGc</recordid><startdate>199501</startdate><enddate>199501</enddate><creator>Lampe, I. V.</creator><creator>Reinhardt, M.</creator><general>Society of Plastics Engineers</general><general>Wiley Subscription Services</general><general>Society of Plastics Engineers, Inc</general><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>199501</creationdate><title>Crosslinking in halogen containing novolac electron beam negative resists</title><author>Lampe, I. V. ; Reinhardt, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3580-4bb183f17662d159162280f571488a63d48ae2f5579d6b829fb5d1555af847f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Applied sciences</topic><topic>Chemical properties</topic><topic>Crosslinked polymers</topic><topic>Exact sciences and technology</topic><topic>Materials</topic><topic>Melamine</topic><topic>Photoresists</topic><topic>Polymer industry, paints, wood</topic><topic>Production processes</topic><topic>Properties and testing</topic><topic>Technology of polymers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lampe, I. V.</creatorcontrib><creatorcontrib>Reinhardt, M.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Gale In Context: Science</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Polymer engineering and science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lampe, I. V.</au><au>Reinhardt, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crosslinking in halogen containing novolac electron beam negative resists</atitle><jtitle>Polymer engineering and science</jtitle><addtitle>Polym Eng Sci</addtitle><date>1995-01</date><risdate>1995</risdate><volume>35</volume><issue>2</issue><spage>180</spage><epage>183</epage><pages>180-183</pages><issn>0032-3888</issn><eissn>1548-2634</eissn><coden>PYESAZ</coden><abstract>Halogenophenol novolac (HPN)‐based negative resists exhibit excellent sensitivity and pattern resolution properties. The HPNs act as synergists for crosslinking with other irradiation labile compounds such as naphthoquinone diazide and bisazide vs. hydrogen halide (HX) elimination reaction, resulting in additional crosslinking, probably by aryl radical recombination and/or addition. We describe a new resist formulation based on HPN binder and melamine crosslinker (Cymel 303). In this case the irradiation induced HX elimination additionally catalyzes the melamine crosslinking.</abstract><cop>Brookfield</cop><pub>Society of Plastics Engineers</pub><doi>10.1002/pen.760350210</doi><tpages>4</tpages></addata></record>
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source Wiley Online Library Journals Frontfile Complete
subjects Applied sciences
Chemical properties
Crosslinked polymers
Exact sciences and technology
Materials
Melamine
Photoresists
Polymer industry, paints, wood
Production processes
Properties and testing
Technology of polymers
title Crosslinking in halogen containing novolac electron beam negative resists
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T20%3A04%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Crosslinking%20in%20halogen%20containing%20novolac%20electron%20beam%20negative%20resists&rft.jtitle=Polymer%20engineering%20and%20science&rft.au=Lampe,%20I.%20V.&rft.date=1995-01&rft.volume=35&rft.issue=2&rft.spage=180&rft.epage=183&rft.pages=180-183&rft.issn=0032-3888&rft.eissn=1548-2634&rft.coden=PYESAZ&rft_id=info:doi/10.1002/pen.760350210&rft_dat=%3Cgale_proqu%3EA16660118%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=218576801&rft_id=info:pmid/&rft_galeid=A16660118&rfr_iscdi=true