Study of Radiative Recombination Rate of Electron–hole Pairs in Hydrogenated Amorphous Silicon by Means of Frequency Resolved Spectroscopy
Temperature variation of radiative recombination rate of electron–hole pairs in hydrogenated amorphous silicon (a-Si:H) films has been obtained from measurements of photoluminescence (PL) by means of frequency resolved spectroscopy (FRS). The radiative recombination rate increases with increasing te...
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| Veröffentlicht in: | Journal of the Physical Society of Japan 2019-02, Vol.88 (2), p.24703 |
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| container_title | Journal of the Physical Society of Japan |
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| creator | Ogihara, Chisato |
| description | Temperature variation of radiative recombination rate of electron–hole pairs in hydrogenated amorphous silicon (a-Si:H) films has been obtained from measurements of photoluminescence (PL) by means of frequency resolved spectroscopy (FRS). The radiative recombination rate increases with increasing temperature. The results are interpreted by considering thermal excitation of the carriers form strongly localized states to shallow tail states. The results also show that the disorder of the amorphous network in the a-Si:H affects the temperature dependence of the radiative recombination rate. Temperature dependence of the radiative recombination rate for the defect PL in a-Si:H films becomes weaker after illumination of intense pulsed light, indicating that the amorphous network becomes more disordered after illumination. |
| doi_str_mv | 10.7566/JPSJ.88.024703 |
| format | Article |
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The radiative recombination rate increases with increasing temperature. The results are interpreted by considering thermal excitation of the carriers form strongly localized states to shallow tail states. The results also show that the disorder of the amorphous network in the a-Si:H affects the temperature dependence of the radiative recombination rate. Temperature dependence of the radiative recombination rate for the defect PL in a-Si:H films becomes weaker after illumination of intense pulsed light, indicating that the amorphous network becomes more disordered after illumination.</description><identifier>ISSN: 0031-9015</identifier><identifier>EISSN: 1347-4073</identifier><identifier>DOI: 10.7566/JPSJ.88.024703</identifier><language>eng</language><publisher>Tokyo: The Physical Society of Japan</publisher><subject>Amorphous silicon ; Hydrogenation ; Illumination ; Light ; Photoluminescence ; Photovoltaic cells ; Radiative recombination ; Spectrum analysis ; Temperature dependence</subject><ispartof>Journal of the Physical Society of Japan, 2019-02, Vol.88 (2), p.24703</ispartof><rights>Copyright The Physical Society of Japan Feb 15, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c315t-9b9f99218754048d46f471050f6248070319c0d79c5628407ad0db5ad6ecd5603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Ogihara, Chisato</creatorcontrib><title>Study of Radiative Recombination Rate of Electron–hole Pairs in Hydrogenated Amorphous Silicon by Means of Frequency Resolved Spectroscopy</title><title>Journal of the Physical Society of Japan</title><description>Temperature variation of radiative recombination rate of electron–hole pairs in hydrogenated amorphous silicon (a-Si:H) films has been obtained from measurements of photoluminescence (PL) by means of frequency resolved spectroscopy (FRS). The radiative recombination rate increases with increasing temperature. The results are interpreted by considering thermal excitation of the carriers form strongly localized states to shallow tail states. The results also show that the disorder of the amorphous network in the a-Si:H affects the temperature dependence of the radiative recombination rate. Temperature dependence of the radiative recombination rate for the defect PL in a-Si:H films becomes weaker after illumination of intense pulsed light, indicating that the amorphous network becomes more disordered after illumination.</description><subject>Amorphous silicon</subject><subject>Hydrogenation</subject><subject>Illumination</subject><subject>Light</subject><subject>Photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Radiative recombination</subject><subject>Spectrum analysis</subject><subject>Temperature dependence</subject><issn>0031-9015</issn><issn>1347-4073</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNotUEFOwzAQtBBIlMKVsyXOCevETpxjVRVKVUTVwDlKbIemSuNgJ5Vy4wHc-CEvwaGcVrs7OzM7CN0S8GMWRferTbryOfchoDGEZ2hCQhp7FOLwHE0AQuIlQNglurJ2DxAwEtAJ-kq7Xg5Yl3ibyyrvqqPCWyX0oaga1-nGzTs17he1Ep3Rzc_n907XCm_yylhcNXg5SKPflYMriWcHbdqd7i1Oq7oS7r4Y8LPKGztyPBj10atGDE7D6vroDtL2j9YK3Q7X6KLMa6tu_usUvT0sXudLb_3y-DSfrT0REtZ5SZGUSRIQHjMKlEsalTQmwKCMAsrBPU8SATJOBIsC7gLIJciC5TJSQrIIwim6O_G2Rjs_tsv2ujeNk8wcK4OAM0Icyj-hhLNnjSqz1lSH3AwZgWxMPBsTzzjPTomHv-GZdbc</recordid><startdate>20190215</startdate><enddate>20190215</enddate><creator>Ogihara, Chisato</creator><general>The Physical Society of Japan</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190215</creationdate><title>Study of Radiative Recombination Rate of Electron–hole Pairs in Hydrogenated Amorphous Silicon by Means of Frequency Resolved Spectroscopy</title><author>Ogihara, Chisato</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-9b9f99218754048d46f471050f6248070319c0d79c5628407ad0db5ad6ecd5603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Amorphous silicon</topic><topic>Hydrogenation</topic><topic>Illumination</topic><topic>Light</topic><topic>Photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Radiative recombination</topic><topic>Spectrum analysis</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ogihara, Chisato</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of the Physical Society of Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ogihara, Chisato</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of Radiative Recombination Rate of Electron–hole Pairs in Hydrogenated Amorphous Silicon by Means of Frequency Resolved Spectroscopy</atitle><jtitle>Journal of the Physical Society of Japan</jtitle><date>2019-02-15</date><risdate>2019</risdate><volume>88</volume><issue>2</issue><spage>24703</spage><pages>24703-</pages><issn>0031-9015</issn><eissn>1347-4073</eissn><abstract>Temperature variation of radiative recombination rate of electron–hole pairs in hydrogenated amorphous silicon (a-Si:H) films has been obtained from measurements of photoluminescence (PL) by means of frequency resolved spectroscopy (FRS). The radiative recombination rate increases with increasing temperature. The results are interpreted by considering thermal excitation of the carriers form strongly localized states to shallow tail states. The results also show that the disorder of the amorphous network in the a-Si:H affects the temperature dependence of the radiative recombination rate. Temperature dependence of the radiative recombination rate for the defect PL in a-Si:H films becomes weaker after illumination of intense pulsed light, indicating that the amorphous network becomes more disordered after illumination.</abstract><cop>Tokyo</cop><pub>The Physical Society of Japan</pub><doi>10.7566/JPSJ.88.024703</doi></addata></record> |
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| language | eng |
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| source | Alma/SFX Local Collection |
| subjects | Amorphous silicon Hydrogenation Illumination Light Photoluminescence Photovoltaic cells Radiative recombination Spectrum analysis Temperature dependence |
| title | Study of Radiative Recombination Rate of Electron–hole Pairs in Hydrogenated Amorphous Silicon by Means of Frequency Resolved Spectroscopy |
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