Structural and ferroelectric properties of Pr doped HfO2 thin films fabricated by chemical solution method

HfO 2 thin films with different praseodymium doping contents (Pr:HfO 2 ) were fabricated by chemical solution deposition (CSD) method at ambient conditions. The chemical bonding and the composition of Pr doped HfO 2 thin film were characterized by X-ray photoelectron spectroscopy (XPS), while the st...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2019-03, Vol.30 (6), p.5771-5779
Hauptverfasser:	Liu, Heng, Zheng, Shuaizhi, Chen, Qiang, Zeng, Binjian, Jiang, Jie, Peng, Qiangxiang, Liao, Min, Zhou, Yichun
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemical bonds Chemical composition Chemistry and Materials Science Coercivity Dopants Doping Ferroelectric materials Ferroelectricity Hafnium oxide Materials Science Optical and Electronic Materials Organic chemistry Orthorhombic phase Photoelectrons Polarization Praseodymium Thin films Transmission electron microscopy X ray photoelectron spectroscopy X-ray diffraction
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