Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive ZnO buffer layer

We report on the effects of using an atomic layer deposited ZnO transparent buffer layer with > 106 Ω cm resistivity on the performance of CdZnS/CdTe solar cells grown by metalorganic chemical vapour deposition (MOCVD). The buffer film thickness is adjusted by optical modelling to suppress the re...

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Veröffentlicht in:	Solar energy materials and solar cells 2019-03, Vol.191, p.78-82
Hauptverfasser:	Kartopu, G., Williams, B.L., Zardetto, V., Gürlek, A.K., Clayton, A.J., Jones, S., Kessels, W.M.M., Creatore, M., Irvine, S.J.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALD Anti-reflection Buffer layers Cadmium tellurides CdTe Chemical vapor deposition Efficiency Energy conversion efficiency Film thickness Light effects MOCVD Organic chemistry Photoelectric effect Photoelectric emission Photovoltaic cells Photovoltaic conversion Photovoltaics Reflectance Reflection Solar cells Spectral sensitivity Thin film PV Zinc oxide ZnO
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